1N3890

更新时间： 2024-11-29 22:37:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		整流二极管齐纳二极管快速恢复二极管
页数	文件大小	规格书
3页	275K
描述
SILICON 1 WATT ZENER DIODES

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中文翻译

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技术参数
数据手册
替代型号

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1N3890 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	零件包装代码：	DO-4
包装说明：	O-MUPM-D1	针数：	1
Reach Compliance Code：	not_compliant	HTS代码：	8541.10.00.80
风险等级：	5.2	应用：	FAST RECOVERY
外壳连接：	CATHODE	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JEDEC-95代码：	DO-203AA	JESD-30 代码：	O-MUPM-D1
JESD-609代码：	e0	最大非重复峰值正向电流：	175 A
元件数量：	1	相数：	1
端子数量：	1	最高工作温度：	175 °C
最低工作温度：	-65 °C	最大输出电流：	20 A
封装主体材料：	METAL	封装形状：	ROUND
封装形式：	POST/STUD MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	参考标准：	MIL
最大重复峰值反向电压：	100 V	最大反向恢复时间：	0.2 µs
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	SOLDER LUG	端子位置：	UPPER
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

1N3890 数据手册

1N3821 thru 1N3830A

1 Watt Metal Case Zener Diodes

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This well established zener diode series for the 1N3821 thru 1N3830A

JEDEC registration in the glass hermetic sealed DO-13 package provides a

low voltage selection for 3.3 to 7.5 volts. It is also well suited for high-

reliability applications where it is available in JAN, JANTX, and JANTXV

military qualifications. Higher voltages are also available in the 1N3016

thru 1N3051 series (6.8 V to 200 V) in the same package (see separate

data sheet). Microsemi also offers numerous other Zener diode products

for a variety of other packages including surface mount.

DO-13

(DO-202AA)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Zener Voltage Range: 3.3 V to 7.5 V

Hermetically sealed DO-13 metal package

Internally solder-bonded construction.

Also available in JAN, JANTX, JANTXV

qualifications per MIL-PRF19500/115 by adding the

JAN, JANTX, or JANTXV prefixes to part numbers

for desired level of screening, e.g. JANTX1N3821,

JANTXV1N3051A, etc.

•

Regulates voltage over a broad operating current

and temperature range

•

Low voltage selection from 3.3 to 7.5 V

Tight voltage tolerances available

Low reverse (leakage) currents

Nonsensitive to ESD

Hermetically sealed metal package

Inherently radiation hard as described in Microsemi

•

Surface mount also available with 1N3821UR-1

MicroNote 050

thru 1N30330AUR-1 series on separate data sheet

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating Junction and Storage Temperatures:

•

CASE: DO-13 (DO-202AA), welded, hermetically

-65^oC to +175^oC

sealed metal and glass

THERMAL RESISTANCE: 50^oC/W* junction to lead

at 0.375 inches (10 mm) from body or 110 ^oC/W

junction to ambient when leads are mounted on FR4

PC board with 4 mm²copper pads (1 oz) and track

width 1 mm, length 25 mm

FINISH: All external surfaces are Tin-Lead (Pb/Sn)

plated and solderable per MIL-STD-750 method

2026

POLARITY: Cathode connected case.

WEIGHT: 1.4 grams.

•

DC Power Dissipation*: 1 Watt at T_L< +125^oC 3/8”

(10 mm) from body or 1.0 Watts at T_L< +65^oC when

mounted on FR4 PC board as described for thermal

resistance above (also see Fig 1)

Tape & Reel option: Standard per EIA-296 (add

“TR” suffix to part number)

•

See package dimensions on last page

•

Forward Voltage @ 200 mA: 1.5 Volts.

Solder Temperatures: 260 ^oC for 10 s (maximum)

* For further mounting reference, thermal resistance from junction to metal case may be reduced to < 20 C/W

when mounting DO-13 metal case directly on heat sink.

Microsemi

Scottsdale Division

Page 1

11-06-2003 REV A

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

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1N3890 替代型号

型号	品牌	替代类型	描述	数据表
MBR20200CT	EIC	功能相似	Schottky Barrier Rectifiers

与1N3890相关器件

型号	品牌	获取价格	描述	数据表
1N3890_10	MICROSEMI	获取价格	HIGH RELIABILITY FAST RECOVERY RECTIFIER
1N3890A	MICROSEMI	获取价格	Fast Recovery Rectifier
1N3890A	NJSEMI	获取价格	Fast Rectifier, 10A < I(O)/I(F) s 20A
1N3890A	MOTOROLA	获取价格	12A, 100V, SILICON, RECTIFIER DIODE, DO-203AA
1N3890A_07	MICROSEMI	获取价格	Fast Recovery Rectifier
1N3890AE3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
1N3890AR	MICROSEMI	获取价格	HIGH RELIABILITY FAST RECOVERY RECTIFIER
1N3890ARE3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
1N3890ARHR	DIGITRON	获取价格	Rectifier Diode
1N3890AR-PBF	DIGITRON	获取价格	Rectifier Diode

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