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1N3879RHR PDF预览

1N3879RHR

更新时间: 2024-09-18 15:24:35
品牌 Logo 应用领域
DIGITRON 快速恢复二极管测试
页数 文件大小 规格书
3页 427K
描述
Rectifier Diode, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon, DO-4

1N3879RHR 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.76
其他特性:HIGH RELIABILITY应用:FAST RECOVERY
最小击穿电压:50 V外壳连接:ANODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.4 V
JEDEC-95代码:DO-4JESD-30 代码:O-MUPM-D1
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:1
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:6 A封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
参考标准:MIL-19500最大重复峰值反向电压:50 V
最大反向电流:15 µA最大反向恢复时间:0.2 µs
反向测试电压:50 V表面贴装:NO
端子形式:SOLDER LUG端子位置:UPPER
Base Number Matches:1

1N3879RHR 数据手册

 浏览型号1N3879RHR的Datasheet PDF文件第2页浏览型号1N3879RHR的Datasheet PDF文件第3页 
1N3879-1N3883  
FAST RECOVERY SILICON RECTIFIER  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
MAXIMUM RATINGS  
Parameters  
Symbol  
VRWM  
VRRM  
TJ  
1N3879  
50V  
1N3880  
100V  
1N3881  
200V  
1N3882  
300V  
1N3883  
400V  
Working peak reverse voltage  
Peak repetitive reverse voltage  
Operating temperature range  
Storage temperature range  
Maximum thermal resistance  
Mounting torque  
50V  
100V  
200V  
300V  
400V  
-65 to +150°C  
-65 to +175°C  
Tstg  
RθJC  
2.0°C/W junction to case  
12-15 inch pounds  
Weight  
.16 ounces (5.0 grams) typical  
Add “R” to part numbers for reverse polarity.  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameters  
Symbol  
IF(AV)  
IFSM  
VFM  
IRM  
Value  
6 Amps  
200 Amps  
1.40 Volts  
15 µA  
Test Condition  
Average forward current  
TC = 100°C, square wave, RθJC = 2.0°C/W  
8.3ms, half-sine, TC = 100°C  
IFM = 20A: TJ = 25°C*  
Maximum surge current  
Maximum peak forward voltage  
Maximum peak reverse current  
Maximum peak reverse current  
Maximum reverse recovery time  
Typical junction capacitance  
VRRM, TJ = 25°C  
IRM  
3.0 mA  
200nS  
VRRM, TJ = 150°C  
tRR  
IF = 1A dc, VR = 30V, di/dt = 25A/µs, TC = 55°C  
VR = 10V, f = 1MHz, TJ = 25°C  
CJ  
115pF  
Pulse test: pulse width 300µsec. Duty cycle 2%  
Rev. 20150317  

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