Datasheet > 1N3830AUR-1E3

1N3830AUR-1E3

更新时间： 2024-11-07 19:48:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		测试二极管
页数	文件大小	规格书
3页	235K
描述
Zener Diode, 7.5V V(Z), 5%, 1.25W, Silicon, Unidirectional, DO-213AB, ROHS COMPLIANT, HERMETIC SEALED, LEADLESS, GLASS, MELF-2

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N3830AUR-1E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DO-213AB	包装说明：	O-LELF-R2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.46	其他特性：	METALLURGICALLY BONDED, HIGH RELIABILITY
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
最大动态阻抗：	1.5 Ω	JEDEC-95代码：	DO-213AB
JESD-30 代码：	O-LELF-R2	JESD-609代码：	e3
元件数量：	1	端子数量：	2
最高工作温度：	175 °C	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	1.25 W	认证状态：	Not Qualified
标称参考电压：	7.5 V	子类别：	Voltage Reference Diodes
表面贴装：	YES	技术：	ZENER
端子面层：	MATTE TIN	端子形式：	WRAP AROUND
端子位置：	END	处于峰值回流温度下的最长时间：	NOT SPECIFIED
最大电压容差：	5%	工作测试电流：	34 mA
Base Number Matches：	1

1N3830AUR-1E3 数据手册

1N3821UR-1 thru 1N3830AUR-1, e3 or

MLL3821 thru MLL3830A, e3

S C O T T S D A L E D I V I S I O N

LEADLESS GLASS ZENER DIODES

DESCRIPTION

APPEARANCE

This surface mountable zener diode series is similar to the lower voltage

1N3821 thru 1N3830 JEDEC registration except it is in a surface mount

DO-213AB package outline. It is an ideal selection for applications of high

density and low parasitic requirements. Due to its glass hermetic qualities

and enhanced metallurgical bonded internal construction, it is also well

suited for high reliability applications. This can be acquired by a source

control drawing (SCD), or simply by ordering device types with a MQ, MX

or MV prefix for equivalent screening to JAN, JANTX or JANTXV

respectively.

DO-213AB

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Leadless package for surface mount equivalent to

1N3821 thru 1N3830A.

•

Regulates voltage over a broad operating current

and temperature range

•

Ideal for high-density mounting

•

Leadless package for surface mounting

Tight voltage tolerances available

Ideal for high-density mounting

Lower voltage selections of 3.3 V to 7.5 V

Hermetically sealed, double-slug glass construction

Metallurgically enhanced contact construction

Metallurgically enhanced internal contact design

for greater reliability and lower thermal resistance

Options for screening in accordance with MIL-PRF-

19500/115 for JAN, JANTX, and JANTXV with MQ, MX

or MV prefixes respectively for part numbers, e.g.

MX1N3821AUR-1, MV1N3828AUR-1, etc.

•

Nonsensitive to ESD

Hermetically sealed glass package

Specified capacitance (see Figure 2)

•

Axial lead “thru-hole” DO-13 packages per JEDEC

registration available as 1N3821A thru 1N3830A (see

separate data sheet with MIL-PRF-19500/115

qualification)

Inherently radiation hard as described in

Microsemi MicroNote 050

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

Power dissipation at 25^ºC: 1.5 watts (also see derating

in Figure 1).

•

CASE: Hermetically sealed glass MELF package

TERMINALS: Tin-Lead (SN/Pb) or RoHS

compliant annealed matte-Tin (Sn) plating

solderable per MIL-STD-750, method 2026

•

Operating and Storage temperature: -65^ºC to +175^ºC

Thermal Resistance: 40 ^ºC/W junction to end cap, or

120^ºC/W junction to ambient when mounted on FR4 PC

board (1 oz Cu) with recommended footprint (see last

page)

•

POLARITY: Cathode indicated by band. Diode

to be operated with the banded end positive with

respect to the opposite end for Zener regulation

•

Steady-State Power: 1.50 watts at end-cap

temperature T_EC< 115^oC, or 1.25 watts at T_A= 25^ºC

when mounted on FR4 PC board and recommended

footprint as described for thermal resistance (also see

Figure 1)

•

MARKING: Cathode band only

TAPE & REEL optional: Standard per EIA-481-1-

A with 12 mm tape, 1500 per 7 inch reel or 5000

per 13 inch reel (add “TR” suffix to part number)

•

WEIGHT: 0.05 grams

•

Forward voltage @200 mA: 1.2 volts (maximum)

Solder Temperatures: 260 ^ºC for 10 s (max)

•See package dimensions on last page

3-12-2006 REV C

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

下载PDF

与1N3830AUR-1E3相关器件

型号	品牌	获取价格	描述	数据表
1N3830AUR-1E3TR	MICROSEMI	获取价格	Zener Diode, 7.5V V(Z), 5%, 1.25W, Silicon, Unidirectional, DO-213AB, ROHS COMPLIANT, HERM
1N3830AUR-1TR	MICROSEMI	获取价格	Zener Diode, 7.5V V(Z), 5%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, LEA
1N3830AUR-1TRE3	MICROSEMI	获取价格	Zener Diode, 7.5V V(Z), 5%, 1.5W,
1N3830CUR-1	MICROSEMI	获取价格	Zener Diode, 7.5V V(Z), 2%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, LEA
1N3830CUR-1E3	MICROSEMI	获取价格	Zener Diode, 7.5V V(Z), 2%, 1.25W, Silicon, Unidirectional, DO-213AB, ROHS COMPLIANT, HERM
1N3830CUR-1TR	MICROSEMI	获取价格	Zener Diode, 7.5V V(Z), 2%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, LEA
1N3830CUR-1TRE3	MICROSEMI	获取价格	Zener Diode, 7.5V V(Z), 2%, 1.5W,
1N3830DUR-1E3	MICROSEMI	获取价格	Zener Diode, 7.5V V(Z), 1%, 1.25W, Silicon, Unidirectional, DO-213AB, ROHS COMPLIANT, HERM
1N3830DUR-1E3TR	MICROSEMI	获取价格	Zener Diode, 7.5V V(Z), 1%, 1.25W, Silicon, Unidirectional, DO-213AB, ROHS COMPLIANT, HERM
1N3830DUR-1TRE3	MICROSEMI	获取价格	Zener Diode, 7.5V V(Z), 1%, 1.5W,

与1N3830AUR-1E3相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

19
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

16
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

39
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

37

产品中心

服务支持

精选活动

关于我们

帮助中心

1N3830AUR-1E3

1N3830AUR-1E3 技术参数

1N3830AUR-1E3 数据手册

与1N3830AUR-1E3相关器件

与1N3830AUR-1E3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N3830AUR-1E3

1N3830AUR-1E3 技术参数

1N3830AUR-1E3 数据手册

与1N3830AUR-1E3相关器件

与1N3830AUR-1E3相关文章

您还可以找

您在本页遇到什么问题？