是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | unknown | 风险等级: | 5.64 |
二极管类型: | RECTIFIER DIODE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
JANTXV1N3768R | MICROSEMI |
功能相似 |
Military Silicon Power Rectifier | |
JANTX1N3768R | MICROSEMI |
功能相似 |
Military Silicon Power Rectifier |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N3768RPBF | VISHAY |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 35A, 1000V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN | |
1N3770 | NJSEMI |
获取价格 |
DIODE | |
1N3772 | ETC |
获取价格 |
FOUR-LAYER (SHOCKLEY) DIODE|20V V(BO) MAX|400UA I(S)|DO-204AA | |
1N3773 | NJSEMI |
获取价格 |
GERMANIUM DIODES | |
1N3773 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 25V V(RRM), Germanium, | |
1N3773R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 25V V(RRM), Germanium, | |
1N3773X | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 25V V(RRM), Germanium, | |
1N3778 | ASI |
获取价格 |
Mixer Diode, Zero Barrier, X Band, Silicon, DO-23, DO-23, 2 PIN | |
1N3779 | MICROSEMI |
获取价格 |
Zener Diode, 6.7V V(Z), 5%, 0.4W, Silicon, DO-7, DO-7, 2 PIN | |
1N3779E3 | MICROSEMI |
获取价格 |
Zener Diode, 6.7V V(Z), 5%, 0.4W, Silicon, DO-7, DO-7, 2 PIN |