Datasheet > 1N3295

1N3295

更新时间： 2024-09-23 06:25:59

品牌	Logo	应用领域
NAINA		二极管
页数	文件大小	规格书
1页	84K
描述
SILICON POWER DIODE

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中文翻译

获取价格

数据手册

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1N3295 数据手册

1N3288-1N3297

NAINA

SILICON POWER DIODE

DO - 8

FEATURES

•

Diffused Series

Available in Normal & Reverse Polarity

Industrial Grade

Available In Avalanche Characteristic

ELECTRICALSPECIFICATIONS

I_F

Maximum Average Forward

Current Te=125⁰C

100A

1.5V

V_FM

I_FSM

I_FRM

Maximum peak forward

voltage drop @ Rated IF(AV)

Maximum peak one cycle

(non-rep) surge current 10 m sec

Maximum peak repetitive

surge current

2200A

500 A

I²t

Maximum I²t rating (non-rep.) for

5 to 10 msec.

24000 A²Sec

THERMALMECHANICAL SPECIFICATIONS

θ_JC

Maximum thermal resistance Junction to case

0.40⁰C/W

Operating Junction Temp.

Storage temperature

Mounting torque

(Non-lubricated threads)

Approx, weight

-65⁰C to 150⁰C

-65⁰C to 200⁰C

2.0 M-kg min,

3.0 M-kg max

150 gms.

Tstg

ELECTRICALRATINGS

TYPE

1N32881N3289 1N32901N3291 1N3292 1N3293 1N32941N3295IN3296

V_RRM

Max. repetitive peak reverse

voltage (v)

100

200 300 400

140 210 280

200 300 400

500

350

500

600

420

600

800 1000 1200

V_R(RMS) Max. R.M.S. reverse voltage(V)

560

800

700 840

1000 1200

V_R

Max. D.C. Blocking Voltage (V)

100

Recommended R.M.S. working

Voltage(v)

120 160

200

240

200

320 400

200 200

480

200

I_R(AV)

Max. Average reverse leakage

200

200 200 200

current @ VRRM Tc 25⁰C (uA)

NAINA SEMICONDUCTOR LTD.,

D-95 ,SECTOR -63 NOIDA(INDIA)

e-mail:sales@nainasemi.com, web site: www.nainasemi.com

中文翻译

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