Datasheet > 1N3051CTRE3

1N3051CTRE3

更新时间： 2024-02-25 22:13:18

品牌	Logo	应用领域
美高森美 - MICROSEMI		测试二极管
页数	文件大小	规格书
3页	154K
描述
Zener Diode, 200V V(Z), 2%, 1W,

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1N3051CTRE3 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.63
配置：	SINGLE	二极管类型：	ZENER DIODE
最大动态阻抗：	1500 Ω	元件数量：	1
最高工作温度：	175 °C	最大功率耗散：	1 W
标称参考电压：	200 V	子类别：	Voltage Reference Diodes
表面贴装：	NO	最大电压容差：	2%
工作测试电流：	1.2 mA	Base Number Matches：	1

1N3051CTRE3 数据手册

1N3016B thru 1N3051B, e3

1 WATT METAL CASE ZENER DIODES

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This well established zener diode series for the 1N3016 thru 1N3051

JEDEC registration in the metal case DO-13 package provides a glass

hermetic seal for 6.8 to 200 volts. It is also well suited for high-reliability

applications where it is available in JAN, JANTX, and JANTXV military

qualifications. Lower voltages are also available in the 1N3821 thru

1N3830 series (3.3 V to 7.5 V) in the same package (see separate data

sheet). Microsemi also offers numerous other Zener diode products for a

variety of other packages including surface mount.

DO-13

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Zener Voltage Range: 6.8V to 200V

Hermetically sealed DO-13 metal package

Internally solder-bonded construction.

•

Regulates voltage over a broad operating current

and temperature range

•

Wide selection from 6.8 to 200 V

Tight voltage tolerances available

Low reverse (leakage) currents

Nonsensitive to ESD

Also available in JAN, JANTX, JANTXV qualifications

per MIL-PRF19500/115 by adding the JAN, JANTX,

or JANTXV prefixes to part numbers for desired level

of screening, e.g. JANTX1N3016B,

Hermetically sealed metal package

JANTXV1N3051B, etc.

Inherently radiation hard as described in

Microsemi MicroNote 050

•

Surface mount also available with 1N3016BUR-1 thru

1N3051BUR-1 series on separate data sheet

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating Junction and Storage Temperatures:

-65^oC to +175^oC

THERMAL RESISTANCE: 50^oC/W* junction to lead

at 0.375 inches (10 mm) from body or 110 ^oC/W

junction to ambient when leads are mounted on FR4

PC board with 4 mm²copper pads (1 oz) and track

width 1 mm, length 25 mm

DC Power Dissipation*: 1.0 Watt at T_L< +125^oC 3/8”

(10 mm) from body or 1.0 Watts at T_L< +65^oC when

mounted on FR4 PC board as described for thermal

resistance above (also see Fig 1)

•

CASE: DO-13 (DO-202AA), welded, hermetically

sealed metal and glass

FINISH: All external surfaces are Tin-Lead (Pb/Sn)

or RoHS Compliant annealed matte-Tin (Sn) plating

and solderable per MIL-STD-750 method 2026

•

POLARITY: Cathode connected case.

WEIGHT: 1.4 grams.

•

Tape & Reel option: Standard per EIA-296 (add

“TR” suffix to part number)

•

See package dimensions on last page

•

Forward Voltage @ 200 mA: 1.5 Volts.

Solder Temperatures: 260 ^oC for 10 s (maximum)

For further mounting reference options, thermal resistance from junction to metal case is < 20 C/W

when mounting DO-13 metal case directly on heat sink.

3-12-2006 REV B

Microsemi

Scottsdale Division

Page 1

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与1N3051CTRE3相关器件

型号	品牌	描述	获取价格	数据表
1N3051CTRUR-1	MICROSEMI	1 WATT METAL CASE ZENER DIODES	获取价格
1N3051CUR-1	MICROSEMI	1 WATT METAL CASE ZENER DIODES	获取价格
1N3051CUR-1E3	MICROSEMI	Zener Diode, 200V V(Z), 2%, 1.25W, Silicon, Unidirectional, DO-213AB, ROHS COMPLIANT, HERM	获取价格
1N3051CUR-1TR	MICROSEMI	Zener Diode, 200V V(Z), 2%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, LEA	获取价格
1N3051CUR-1TRE3	MICROSEMI	Zener Diode, 200V V(Z), 2%, 1.5W,	获取价格
1N3051D	MICROSEMI	1 WATT METAL CASE ZENER DIODES	获取价格

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