生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.21 | 其他特性: | N-M, I/P POWER-MAX(PEAK)=2000W |
标称衰减: | 40 dB | 特性阻抗: | 50 Ω |
构造: | COAXIAL | 最大输入功率 (CW): | 53.01 dBm |
JESD-609代码: | e4 | 最大工作频率: | 1500 MHz |
最小工作频率: | 最高工作温度: | 125 °C | |
最低工作温度: | -54 °C | 射频/微波设备类型: | FIXED ATTENUATOR |
端子面层: | GOLD | 最大电压驻波比: | 1.15 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N201 | ETC |
获取价格 |
silicon diode | |
1N2010 | MICROSEMI |
获取价格 |
Zener Diode, 120V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN | |
1N2010A | MICROSEMI |
获取价格 |
Zener Diode, 120V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN | |
1N2010C | MICROSEMI |
获取价格 |
Zener Diode, 120V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN | |
1N2010CA | MICROSEMI |
获取价格 |
Zener Diode, 120V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN | |
1N2010CAE3 | MICROSEMI |
获取价格 |
Zener Diode, 120V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN | |
1N2010CE3 | MICROSEMI |
获取价格 |
Zener Diode, 120V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN | |
1N2010E3 | MICROSEMI |
获取价格 |
Zener Diode, 120V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN | |
1N2011 | MICROSEMI |
获取价格 |
Zener Diode, 130V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN | |
1N2011A | MICROSEMI |
获取价格 |
Zener Diode, 130V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN |