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1N1811E3 PDF预览

1N1811E3

更新时间: 2024-11-18 15:31:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 测试二极管
页数 文件大小 规格书
1页 108K
描述
Zener Diode, 130V V(Z), 10%, 10W, Silicon, Unidirectional, DO-4, DO-4, 1 PIN

1N1811E3 技术参数

生命周期:Obsolete包装说明:O-MUPM-D1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.8
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-4
JESD-30 代码:O-MUPM-D1元件数量:1
端子数量:1封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
极性:UNIDIRECTIONAL最大功率耗散:10 W
标称参考电压:130 V表面贴装:NO
技术:ZENER端子形式:SOLDER LUG
端子位置:UPPER最大电压容差:10%
工作测试电流:50 mABase Number Matches:1

1N1811E3 数据手册

  

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