生命周期: | Active | 零件包装代码: | DO-4 |
包装说明: | O-MUPM-D1 | 针数: | 1 |
Reach Compliance Code: | unknown | HTS代码: | 8541.10.00.80 |
风险等级: | 5.37 | Is Samacsys: | N |
应用: | GENERAL PURPOSE | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
最大正向电压 (VF): | 1.5 V | JEDEC-95代码: | DO-4 |
JESD-30 代码: | O-MUPM-D1 | 元件数量: | 1 |
相数: | 1 | 端子数量: | 1 |
最高工作温度: | 175 °C | 最大输出电流: | 5 A |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 600 V | 子类别: | Rectifier Diodes |
表面贴装: | NO | 端子形式: | SOLDER LUG |
端子位置: | UPPER | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N1616A | MICROSEMI |
获取价格 |
SILICON POWER RECTIFIER | |
1N1616A | NJSEMI |
获取价格 |
Diode 600V 16A 2-Pin DO-4 | |
1N1616AE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 16A, 600V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | |
1N1616AR | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 16A, 600V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | |
1N1616R | MICROSEMI |
获取价格 |
Military Silicon Power Rectifier | |
1N1616R | DIODES |
获取价格 |
Rectifier Diode, 1 Element, 7A, 600V V(RRM) | |
1N1616R | NJSEMI |
获取价格 |
SILICON POWER RECTIFIER | |
1N1660 | MICROSEMI |
获取价格 |
SILICON POWER RECTIFIER | |
1N1660E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 50V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN | |
1N1660ILE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 275A, 50V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN |