生命周期: | Active | 零件包装代码: | DO-22 |
包装说明: | O-LALF-W1 | 针数: | 1 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.60 | 风险等级: | 5.72 |
Is Samacsys: | N | 其他特性: | MATCHED PAIR |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | MIXER DIODE |
频带: | C BAND | JEDEC-95代码: | DO-22 |
JESD-30 代码: | O-LALF-W1 | 最大噪声指数: | 9.8 dB |
元件数量: | 1 | 端子数量: | 1 |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 认证状态: | Not Qualified |
表面贴装: | NO | 技术: | POINT CONTACT |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N1510A | VISHAY |
获取价格 |
Zener Diode, 6.8V V(Z), 5%, 1W, Silicon, Unidirectional, DO-13, METAL PACKAGE-2 | |
1N1521A | NJSEMI |
获取价格 |
Ref/Reg Diode | |
1N1522 | NJSEMI |
获取价格 |
Ref/Reg Diode | |
1N156 | NJSEMI |
获取价格 |
PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTORS | |
1N158 | NJSEMI |
获取价格 |
PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTORS | |
1N1581 | NJSEMI |
获取价格 |
Rectifiers | |
1N1581 | MICROSEMI |
获取价格 |
SILICON POWER RECTIFIER | |
1N1581E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 16A, 50V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | |
1N1581R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 16A, 50V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | |
1N1581RE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 16A, 50V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN |