Datasheet > 1MBI900VXA-120PD-50

1MBI900VXA-120PD-50

更新时间： 2024-11-21 15:19:43

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
9页	448K
描述
1-Pack(1 in 1) M271

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中文翻译

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数据手册

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1MBI900VXA-120PD-50 数据手册

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http://www.fujielectric.com/products/semiconductor/

1MBI900VXA-120PD-50

IGBT MODULE (V series)

IGBT Modules

1200V / 900A / 1 in one package

Features

High speed switching

Voltage drive

Low Inductance module structure

Applications

NPC 3-level Inverter

Inverter DB for Motor Drive

AC and DC Servo Drive Ampliﬁer (DB)

Active PFC

Industrial machines

Maximum Ratings and Characteristics

Maximum Ratings (at T

=25°C unless otherwise speciﬁed)

Symbols

Items

Conditions

Maximum ratings

Units

Collector-Emitter voltage

Gate-Emitter voltage

CES

1200

±20

VGES

=25°C

1200

900

Continuous

1ms

=100°C

Collector current for IGBT and Inverse Diode

C pulse

1800

120

-I

-I^{C pulse}

1ms

240

Collector Power Dissipation

Reverse voltage for FWD

1 device

5100

1200

900

Continuous

1ms

Forward current for FWD

Junction temperature

IF pulse

1800

175

Operating junction temperature

(under switching conditions)

Tjop

150

°C

Case temperature

150

Storage temperature

Tstg

-40 ~ +150

between terminal and copper base (*1)

Isolation voltage

iso

AC : 1min.

4000

VAC

N m

between thermistor and others (*2)

Mounting

6.0

10.0

2.1

Screw Torque

(*3)

Main Terminals

Sense Terminals

Note *1: All terminals should be connected together during the test.

Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.

Note *3: Recommendable Value : Mounting

Recommendable Value : Main Terminals

3.0 ~ 6.0 Nm (M5)

8.0 ~ 10.0 Nm (M8)

Recommendable Value : Sense Terminals 1.8 ~ 2.1 Nm (M4)

8243

JUNE 2015

12 3 4 5 6 7...9

中文翻译

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