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1MBI3600U4D-170 PDF预览

1MBI3600U4D-170

更新时间: 2024-11-18 12:20:23
品牌 Logo 应用领域
富士电机 - FUJI 双极性晶体管
页数 文件大小 规格书
6页 515K
描述
IGBT MODULE

1MBI3600U4D-170 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-XUFM-X9
针数:9Reach Compliance Code:unknown
风险等级:5.63外壳连接:ISOLATED
最大集电极电流 (IC):3600 A集电极-发射极最大电压:1700 V
JESD-30 代码:R-XUFM-X9元件数量:1
端子数量:9最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管元件材料:SILICON标称断开时间 (toff):1450 ns
标称接通时间 (ton):3100 nsBase Number Matches:1

1MBI3600U4D-170 数据手册

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1MBI3600U4D-170  
IGBT MODULE (U series)  
IGBT Modules  
1700V / 3600A / 1 in one package  
Features  
High speed switching  
Voltage drive  
Low Inductance module structure  
Applications  
Inverter for Motor Drive  
AC and DC Servo Drive Amplifier  
Uninterruptible Power Supply  
Industrial machines, such as Welding machines  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)  
Items  
Symbols  
Conditions  
Maximum ratings  
Units  
Collector-Emitter voltage  
Gate-Emitter voltage  
V
CES  
1700  
±20  
V
V
VGES  
Tc=25°C  
Tc=80°C  
Tc=25°C  
Tc=80°C  
4800  
3600  
9600  
7200  
3600  
7200  
18650  
150  
Ic  
Continuous  
1ms  
Collector current  
Ic pulse  
A
-Ic  
-Ic pulse  
Pc  
Tj  
Tstg  
1ms  
1 device  
Collector power dissipation  
Junction temperature  
Storage temperature  
W
°C  
°C  
-40 to +125  
3400  
5.75  
Isolation voltage Between terminal and copper base (*1) Viso  
Mounting (*2)  
AC : 1min.  
VAC  
Screw torque  
Main Terminals (*2)  
Sense Terminals (*2)  
10  
2.5  
N·m  
Note *1: All terminals should be connected together when isolation test will be done.  
Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4)  
Electrical characteristics (at Tj= 25°C unless otherwise specified)  
Characteristics  
Items  
Symbols  
Conditions  
Units  
min.  
typ.  
-
max.  
1.0  
Zero gate voltage collector current  
Gate-Emitter leakage current  
Gate-Emitter threshold voltage  
I
I
CES  
GES  
V
V
V
GE = 0V, VCE = 1700V  
CE = 0V, VGE = ±20V  
-
-
mA  
nA  
V
-
4800  
V
GE (th)  
CE = 20V, I  
C
= 3600mA  
5.5  
-
6.5  
7.5  
2.77  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
2.57  
2.97  
2.25  
2.65  
336  
1.80  
0.85  
1.30  
0.35  
2.12  
2.32  
1.80  
2.00  
0.35  
0.089  
V
CE (sat)  
(main terminal)  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
GE = 15V  
= 3600A  
Collector-Emitter saturation voltage  
V
I
C
2.40  
V
CE (sat)  
(chip)  
Cies  
ton  
tr  
toff  
tf  
-
-
-
-
-
-
Input capacitance  
Turn-on time  
V
GE = 0V, VCE = 10V, f = 1MHz  
nF  
µs  
V
V
CC = 900V, I  
GE = ±15V, Tj = 125°C  
C
= 3600A  
R
gon = 1Ω, Rgoff = 0.18Ω  
Turn-off time  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
2.52  
V
F
(main terminal)  
-
V
GE = 0V  
Forward on voltage  
V
I
F
= 3600A  
2.15  
V
F
(chip)  
-
-
-
Reverse recovery time  
Lead resistance, terminal-chip  
trr  
R lead  
I
F
= 3600A  
µs  
mΩ  
Thermal resistance characteristics  
Items  
Characteristics  
Symbols Conditions  
Units  
min.  
typ.  
max.  
IGBT  
Rth(j-c)  
-
-
-
-
-
0.0067  
0.011  
-
Thermal resistance (1device)  
FWD  
°C/W  
Contact thermal resistance (1device)  
Rth(c-f)  
with Thermal Compound (*3)  
0.004  
Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound.  
1

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