Datasheet > 1MBI2400VS-170E

1MBI2400VS-170E

更新时间： 2024-11-20 20:01:35

品牌	Logo	应用领域
富士电机 - FUJI		栅
页数	文件大小	规格书
7页	689K
描述
Insulated Gate Bipolar Transistor

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中文翻译

获取价格

技术参数
数据手册

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1MBI2400VS-170E 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.61	Base Number Matches：	1

1MBI2400VS-170E 数据手册

http://www.fujielectric.com/products/semiconductor/

IGBT Modules

1MBI2400VS-170E

IGBT MODULE (V series)

1700V / 2400A / 1 in one package

Features

High speed switching

Voltage drive

Low Inductance module structure

Applications

Inverter for Motor Drive

AC and DC Servo Drive Ampliﬁer

Uninterruptible Power Supply

Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise speciﬁed)

Items

Symbols

Conditions

Maximum ratings

Units

Collector-Emitter voltage

Gate-Emitter voltage

CES

1700

±20

VGES

Tc=25°C

Tc=100°C

3600

2400

4800

2400

4800

16120

175

Continuous

1ms

Collector current

-I

-I^{c pulse}

1ms

Collector power dissipation

Junction temperature

Operating junction temperature

(under switching conditions)

1 device

jop

150

°C

Storage temperature

stg

-40 ~ +125

4000

5.75

Isolation voltage Between terminal and copper base (*1) Viso

Mounting

AC : 1min.

VAC

Screw torque (*2)

Main Terminals

Sense Terminals

2.5

Note *1: All terminals should be connected together when isolation test will be done.

Note *2: Recommendable Value :

Mounting 4.25~5.75 Nm (M6) , Main Terminals 8~10 Nm (M8) , Sense Terminals 1.7~2.5 Nm (M4)

8045

FEBRUARY 2013

12 3 4 5 6 7

中文翻译

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