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1KS1012F PDF预览

1KS1012F

更新时间: 2024-11-19 18:09:55
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
3页 362K
描述
Switching Diodes

1KS1012F 数据手册

 浏览型号1KS1012F的Datasheet PDF文件第2页浏览型号1KS1012F的Datasheet PDF文件第3页 
SMD Type  
Diodes  
Switching Diodes  
1KS1012F  
SOD-323  
Ƶ Features  
ƽ Silicon epitaxial planar diode  
ƽ Fast switching diode  
1
2
Top View  
PIN DESCRIPTION  
PIN  
1
DESCRIPTION  
Cathode  
Anode  
2
Ƶ Absolute Maximum Ratings (T  
a
= 25ć,unless otherwise specified)  
Parameter  
Repetitive peak reverse voltage  
Reverse Voltage  
Symbol  
Value  
Unit  
V
V
RRM  
130  
100  
V
R
Forward continuous current  
IF  
250  
mA  
t = 1μs  
t = 1ms  
t = 1s  
2
Non-repetitive peak forward current  
IFSM  
A
1
0.5  
Power dissipation  
P
tot  
200  
mW  
Thermal resistance junction to ambient air  
Junction Temperature  
ꢀ:  
R
thJA  
650  
T
J
150  
ć
Storage Temperature range  
T
stg  
-55 to 150  
Ƶ Electrical Characteristics (Ta = 25 °C, unless otherwise specified)  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
V
V
V
R
R
R
= 100 V  
1
30  
Reverse current  
IR  
= 25 V, T  
J
= 150 ഒ  
μA  
= 100 V, T = 150 ഒ  
J
50  
I
F
= 1 mA  
0.715  
0.855  
1
IF  
= 10 mA  
= 50 mA  
= 150 mA  
Forward voltage  
V
F
V
IF  
IF  
1.25  
2
Diode capacitance  
C
D
V
R
= 0 V, f= 1 MHz  
pF  
ns  
Reverse recovery time  
t
rr  
IF  
= IR = 10 mA, i  
R
= 1 mA, R  
L
= 100¡  
4
Ƶ Marking  
Marking  
A
1
www.kexin.com.cn  

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