SMD Type
Diodes
Schottky Diodes
1KK2502B ~ 1KK2520B
SMB
■ Features
2
● Reverse Voltage - 20 to 200 V
● Forward Current - 5.0 A
● Metal silicon junction, majority carrier conduction
● For surface mounted applications
1
● Low power loss, high efficiency
Top View
Simplified outline SMB and Symbol
● High forward surge current capability
PIN DESCRIPTION
● For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
PIN
1
DESCRIPTION
Cathode
Anode
2
■ Absolute Maximum Ratings and Electrical characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
1KK
1KK
1KK
1KK
1KK
1KK
1KK
1KK
Parameter
Symbols
VRRM
Unit
V
2502B 2504B 2506B 2508B 2510B 2512B 2515B 2520B
Maximum Repetitive Peak Reverse Voltage
20
40
60
80
100
120
150
200
Maximum RMS voltage
14
20
28
40
42
60
56
80
70
84
105
150
140
200
VRMS
VDC
Maximum DC Blocking Voltage
100
120
0.55
0.70
0.85
Maximum Instantaneous Forward Voltage at 5A
Maximum Averaged Forward Rectified Current
VF
5.0
IF(AV)
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
IFSM
150
1.0
50
Maximum DC Reverse Current Ta=25℃
IR
mA
at rated DC blocking voltage
Typical Junction Capacitance
Typical Thermal Resistance
Ta=100℃
500
300
*1
*2
Cj
pF
55
RᶿJA
℃/W
-55 ~ +125
-55 ~ +150
Operating Junction Temperature Range
Storage Temperature Range
T
j
℃
Tstg
* 1 Measured at 1MHz and applied reverse voltage of 4V D.C.
* 2 P.C.B. mounted with 2.0″×2.0″(5×5 cm) copper pad areas.
■ Marking
1KK
2502B
1KK
2504B
1KK
2506B
1KK
2508B
1KK
2510B
1KK
2512B
1KK
2515B
1KK
2520B
NO.
Marking
5B02
5B04
5B06
5B08
5B10
5B12
5B15
5B20
1
www.kexin.com.cn