SMD Type
Diodes
Schottky Diodes
1KK2502AF ~ 1KK2520AF
Ƶ Features
SMAF
ƽ Reverse Voltage - 20 to 200V
ƽ Forward Current - 5.0A
1
ƽ Metal silicon junction, majority carrier conduction
ƽ For surface mounted applications
2
ƽ Low power loss, high efficiency
Top View
ƽ High forward surge current capability
Simplified outline SMAF and symbol
ƽ For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
PIN DESCRIPTION
PIN
1
DESCRIPTION
Cathode
Anode
2
Ƶ Absolute Maximum Ratings and Electrical characteristics
Ratings at 25ć ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
1KK2 1KK2 1KK2 1KK2 1KK2 1KK2 1KK2 1KK2
502AF 504AF 506AF 508AF 510AF 512AF 515AF 520AF
Parameter
Symbol
VRRM
Unit
V
Maximum Repetitive Peak Reverse Voltage
20
40
60
80
100
120
150
200
Maximum RMS voltage
14
20
28
40
42
60
56
80
70
84
105
150
140
200
VRMS
VDC
Maximum DC Blocking Voltage
100
120
Maximum Average Forward Rectified Current
5.0
IF(AV)
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
A
IFSM
120
0.55
500
0.7
0.85
Max Instantaneous Forward Voltage at 5 A
VF
IR
V
1.0
50
Ta = 25ć
Maximum DC Reverse Current
at rated DC blocking voltage
mA
Ta = 100ć
300
Typical Junction Capacitance
Typical thermal resistance
Junction Temperature
*1
*2
Cj
pF
60
RthJA
ć/W
150
T
j
ć
Storage Temperature
-55 to 150
Tstg
* 1 Measured at 1MHz and applied reverse voltage of 4 V D.C
* 2 P.C.B. mounted with 2ą× 2ą(5×5 cm) copper pad areas.
Ƶ Marking
NO.
1KK2502AF 1KK2504AF 1KK2506AF 1KK2508AF 1KK2510AF 1KK2512AF 1KK2515AF 1KK2520AF
5A02 5A04 5A06 5A08 5A10 5A12 5A15 5A20
Marking
1
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