SMD Type
Diodes
T
Schottky Diodes
1KK2302B ~ 1KK2320B
Ƶ Features
ƽ Reverse Voltage - 20 to 200 V
SMB
2
ƽ Forward Current - 3.0 A
ƽ Metal silicon junction, majority carrier conduction
ƽ For surface mounted applications
1
ƽ Low power loss, high efficiency
ƽ High forward surge current capability
Top View
Simplified outline SMB and Symbol
ƽ For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
PIN DESCRIPTION
PIN
1
DESCRIPTION
Cathode
Anode
2
Ƶ Absolute Maximum Ratings and Electrical characteristics
Ratings at 25ć ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
1KK
1KK
1KK
1KK
1KK
1KK
1KK
1KK
Parameter
Symbols
VRRM
Unit
V
2302B 2304B 2306B 2308B 2310B 2312B 2315B 2320B
Maximum Repetitive Peak Reverse Voltage
20
40
60
80
100
120
150
200
Maximum RMS voltage
14
20
28
40
42
60
56
80
70
84
105
150
140
200
VRMS
VDC
Maximum DC Blocking Voltage
100
120
0.55
0.70
0.85
0.95
Maximum Instantaneous Forward Voltage at 3A
Maximum Averaged Forward Rectified Current
VF
3.0
80
IF(AV)
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
IFSM
0.5
5
0.3
3
Maximum DC Reverse Current Ta=25ć
IR
mA
at rated DC blocking voltage
Typical Junction Capacitance
Typical Thermal Resistance
Ta=100ć
450
400
*1
*2
Cj
pF
65
R
ೃJA
ć/W
-55 ~ +150
-55 ~ +150
Operating Junction Temperature Range
Storage Temperature Range
T
j
ć
Tstg
* 1 Measured at 1MHz and applied reverse voltage of 4V D.C.
* 2 P.C.B. mounted with 2.0ą×2.0ą(5×5 cm) copper pad areas.
Ƶ Marking
1KK
2302B
1KK
2304B
1KK
2306B
1KK
2308B
1KK
2310B
1KK
2312B
1KK
2315B
1KK
2320B
NO.
Marking
3B02
3B04
3B06
3B08
3B10
3B12
3B15
3B20
1
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