SMD Type
Diodes
T
Schottky Diodes
1KK2302AF ~ 1KK2320AF
■ Features
SMAF
● Reverse Voltage - 20 to 200 V
● Forward Current - 3.0 A
● Metal silicon junction, majority carrier conduction
● For surface mounted applications
1
2
● Low power loss, high efficiency
Top View
● High forward surge current capability
Simplified outline SMAF and symbol
● For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
PIN DESCRIPTION
PIN
1
DESCRIPTION
Cathode
Anode
2
■ Absolute Maximum Ratings and Electrical characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
1KK
1KK
1KK 1KK
1KK
1KK
1KK 1KK
Parameter
Symbols
VRRM
Unit
V
2302AF 2304AF 2306AF 2308AF 2310AF 2312AF 2315AF 2320AF
Maximum Repetitive Peak Reverse Voltage
20
40
60
80
100
120
150
200
Maximum RMS voltage
14
20
28
40
42
60
56
80
70
84
105
150
140
200
VRMS
VDC
Maximum DC Blocking Voltage
100
120
0.55
0.70
0.85
0.95
Maximum Instantaneous Forward Voltage at 3A
Maximum Averaged Forward Rectified Current
VF
3.0
80
IF(AV)
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
IFSM
0.5
5
0.3
3
Maximum DC Reverse Current Ta=25℃
IR
mA
at rated DC blocking voltage
Typical Junction Capacitance
Typical Thermal Resistance
Ta=100℃
250
180
*1
*2
Cj
pF
70
RthJA
℃/W
-55 ~ +150
-55 ~ +150
Operating Junction Temperature Range
Storage Temperature Range
T
j
℃
Tstg
* 1 Measured at 1MHz and applied reverse voltage of 4V D.C.
* 2 P.C.B. mounted with 2.0″×2.0″(5×5 cm) copper pad areas.
■ Marking
1KK
1KK
1KK
1KK
1KK
1KK
1KK
1KK
NO.
2302AF 2304AF 2306AF 2308AF 2310AF 2312AF 2315AF 2320AF
Marking
3A02 3A04 3A06 3A08 3A10 3A12 3A15 3A20
1
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