SMD Type
Diodes
Schottky Diodes
1KK2202B ~ 1KK2220B
SMB
■ Features
● Reverse Voltage - 20 to 200 V
2
● Forward Current - 2.0 A
● Metal silicon junction, majority carrier conduction
● For surface mounted applications
1
● Low power loss, high efficiency
Top View
● High forward surge current capability
Simplified outline SMB and Symbol
● For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
PIN DESCRIPTION
PIN
1
DESCRIPTION
Cathode
Anode
2
■ Absolute Maximum Ratings and Electrical characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
1KK
1KK
1KK
1KK
1KK
1KK
1KK
1KK
Parameter
Symbols
VRRM
Unit
V
2202B 2204B 2206B 2208B 2210B 2212B 2215B 2220B
Maximum Repetitive Peak Reverse Voltage
20
40
60
80
100
120
150
200
Maximum RMS voltage
14
20
28
40
42
60
56
80
70
84
105
150
140
200
VRMS
VDC
Maximum DC Blocking Voltage
100
120
0.55
0.70
0.85
0.95
Maximum Instantaneous Forward Voltage at 2A
Maximum Averaged Forward Rectified Current
VF
2.0
50
IF(AV)
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
IFSM
0.5
5
0.3
3
Maximum DC Reverse Current Ta=25℃
IR
mA
at rated DC blocking voltage
Typical Junction Capacitance
Typical Thermal Resistance
Ta=100℃
220
80
*1
*2
Cj
pF
75
RᶿJA
℃/W
-55 ~ +125
-55 ~ +150
Operating Junction Temperature Range
Storage Temperature Range
T
j
℃
Tstg
* 1 Measured at 1MHz and applied reverse voltage of 4V D.C.
* 2 P.C.B. mounted with 2.0″×2.0″(5×5 cm) copper pad areas.
■ Marking
1KK
2202B
1KK
2204B
1KK
2206B
1KK
2208B
1KK
2210B
1KK
2212B
1KK
2215B
1KK
2220B
NO.
Marking
2B02
2B04
2B06
2B08
2B10
2B12
2B15
2B20
1
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