SMD Type
Diodes
T
Schottky Diodes
1KK2202AF ~ 1KK2220AF
SMAF
Ƶ Features
ƽ Reverse Voltage - 20 to 200 V
ƽ Forward Current - 2.0 A
1
2
ƽ Metal silicon junction, majority carrier conduction
ƽ For surface mounted applications
ƽ Low power loss, high efficiency
ƽ High forward surge current capability
ƽ For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Top View
Simplified outline SMAF and symbol
PIN DESCRIPTION
PIN
1
DESCRIPTION
Cathode
Anode
2
Ƶ Absolute Maximum Ratings and Electrical characteristics
Ratings at 25ć ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
1KK
1KK 1KK
1KK
1KK
1KK
1KK
1KK
Parameter
Symbols
VRRM
Unit
V
2202AF 2204AF 2206AF 2208AF 2210AF 2212AF 2215AF 2220AF
Maximum Repetitive Peak Reverse Voltage
20
40
60
80
100
120
150
200
Maximum RMS voltage
14
20
28
40
42
60
56
80
70
84
105
150
140
200
VRMS
VDC
Maximum DC Blocking Voltage
100
120
0.55
0.70
0.85
0.95
Maximum Instantaneous Forward Voltage at 2A
Maximum Averaged Forward Rectified Current
VF
2.0
50
IF(AV)
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
IFSM
0.5
5
0.3
3
Maximum DC Reverse Current Ta=25ć
IR
mA
at rated DC blocking voltage
Typical Junction Capacitance
Typical Thermal Resistance
Ta=100ć
220
80
*1
*2
Cj
pF
80
R
ೃJA
ć/W
-55 ~ +125
-55 ~ +150
Operating Junction Temperature Range
Storage Temperature Range
T
j
ć
Tstg
* 1 Measured at 1MHz and applied reverse voltage of 4V D.C.
* 2 P.C.B. mounted with 2.0ą×2.0ą(5×5 cm) copper pad areas.
Ƶ Marking
1KK
2202AF
1KK
2204AF
1KK
2206AF
1KK
2208AF
1KK
2210AF
1KK
2212AF
1KK
2215AF
1KK
2220AF
NO.
Marking
2A02
2A04
2A06
2A08
2A10
2A12
2A15
2A20
1
www.kexin.com.cn