Datasheet > 1KK2104D

1KK2104D

更新时间： 2024-10-15 18:06:23

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科信 - KEXIN		/
页数	文件大小	规格书
6页	403K
描述
Schottky Diodes

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中文翻译

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数据手册

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1KK2104D 数据手册

SMD Type

Diodes

Schottky Diodes

1KK2102D-1KK2104D

SOD-123FL

Ƶ Features

ƽ Metal silicon junction, majority carrier conduction

ƽ For surface mounted applications

ƽ Low power loss, high efficiency

ƽ High forward surge current capability

ƽ For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

Top View

PINNING

DESCRIPTION

Cathode

Anode

Ƶ Absolute Maximum Ratings and Electrical characteristics

Ratings at 25ć ambient temperature unless otherwise specified.

Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.

Parameter

Symbols

V_RRM

1KK2102D

1KK2104D

Unit

Maximum Repetitive Peak Reverse Voltage

Maximum RMS voltage

V_RMS

V_DC

Maximum DC Blocking Voltage

0.55

1.0

Maximum Instantaneous Forward Voltage at 1A

Maximum Averaged Forward Rectified Current

V_F

I_F(AV)

Peak Forward Surge Current, 8.3 ms Single Half

Sine Wave Superimposed on Rated Load

I_FSM

0.3

Maximum DC Reverse Current T_a=25ć

I_R

at rated DC blocking voltage

Typical Junction Capacitance

Typical Thermal Resistance

T_a=100ć

110

C_j

100

ೃJA

ć/W

-55 ~ +125

-55 ~ +150

Operating Junction Temperature Range

Storage Temperature Range

T_stg

* 1 Measured at 1MHz and applied reverse voltage of 4V D.C.

* 2 P.C.B. mounted with 2.0ą×2.0ą(5×5 cm) copper pad areas.

Ƶ Marking

NO.

1KK2ꢀ02D

1KK2ꢀ04D

Marking

www.kexin.com.cn

12 3 4 5 6

中文翻译

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