SMD Type
Diodes
T
Schottky Diodes
1KK2102AF ~ 1KK2120AF
SMAF
Ƶ Features
ƽ Reverse Voltage - 20 to 200 V
ƽ Forward Current - 1.0 A
1
2
ƽ Metal silicon junction, majority carrier conduction
ƽ For surface mounted applications
Top View
ƽ Low power loss, high efficiency
Simplified outline SMAF and symbol
ƽ High forward surge current capability
PIN DESCRIPTION
ƽ For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
PIN
1
DESCRIPTION
Cathode
Anode
2
Ƶ Absolute Maximum Ratings and Electrical characteristics
Ratings at 25ć ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
1KK
1KK
1KK
1KK
1KK
1KK
1KK
1KK
Parameter
Symbols
VRRM
Unit
V
2102AF 2104AF 2106AF 2108AF 2110AF 2112AF 2115AF 2120AF
Maximum Repetitive Peak Reverse Voltage
20
40
60
80
100
120
150
200
Maximum RMS voltage
14
20
28
40
42
60
56
80
70
84
105
150
140
200
VRMS
VDC
Maximum DC Blocking Voltage
100
120
0.55
0.70
0.85
0.90
Maximum Instantaneous Forward Voltage at 1A
Maximum Averaged Forward Rectified Current
VF
1
IF(AV)
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
IFSM
25
0.3
10
0.2
5
0.1
2
Maximum DC Reverse Current Ta=25ć
IR
mA
at rated DC blocking voltage
Typical Junction Capacitance
Typical Thermal Resistance
Ta=100ć
110
80
*1
*2
Cj
pF
95
R
ೃJA
ć/W
-55 ~ +150
-55 ~ +150
Operating Junction Temperature Range
Storage Temperature Range
T
j
ć
Tstg
* 1 Measured at 1MHz and applied reverse voltage of 4V D.C.
* 2 P.C.B. mounted with 2.0ą×2.0ą(5×5 cm) copper pad areas.
Ƶ Marking
1KK
2102AF
1KK
2104AF
1KK
2106AF
1KK
2108AF
1KK
2110AF
1KK
2112AF
1KK
2115AF
1KK
2120AF
NO.
Marking
1A02
1A04
1A06
1A08
1A10
1A12
1A15
1A20
1
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