Datasheet > 1KF2170A

1KF2170A

更新时间： 2024-11-19 18:05:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	420K
描述
Fast Recovery Rectifier

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中文翻译

获取价格

数据手册

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1KF2170A 数据手册

SMD Type

Diodes

Ultra Fast Rectifier

1KF2120A ~ 1KF2170A

SMA

Ƶ Features

ƽ For surface mounted applications

ƽ Ultra fast switching for high efficiency

ƽ Low reverse leakage

ƽ Built-in strain relief,ideal for automated placement

ƽ High forward surge current capability

ƽ High temperature soldering guaranteed

250ć/10 seconds at terminals

Top View

Simplified outline SMA and Symbol

PIN DESCRIPTION

DESCRIPTION

Cathode

Anode

Ƶ Maximum Ratings and Electrical Characteristics

5DWLQJꢀDWꢀꢁꢂr&ꢀDPELHQWꢀWHPSHUDWXUHꢀXQOHVVꢀRWKHUZLVHꢀVSHFLILHGꢃ

6LQJOHꢀSKDVHꢄꢀKDOIꢀZDYHꢄꢀꢅꢆꢀ+]ꢄꢀUHVLVWLYHꢀRUꢀLQGXFWLYHꢀORDGꢃꢀ)RUꢀFDSDFLWLYHꢀORDGꢄꢀGHUDWHꢀFXUUHQWꢀE\ꢀꢁꢆꢇ

Parameter

Symbol

V_RRM

1KF2120A

1KF2160A

1KF2170A

Unit

Repetitive Peak Reverse Voltage

200

600

1000

Maximum RMS Voltage

140

200

420

600

700

V_RMS

V_DC

Maximum DC Blocking Voltage

1000

1.7

Instantaneous Forward Voltage at I_F=1.0A

V_F

1.0

Maximum Average Forward Rectified Current

@TA = 55°C

1.0

I_F(AV)

Peak Forward Surge Current 8.3 ms Single

Half Sine-wave Superimposed on Rated Load

I_FSM

Maximum DC Reverse Current T_A=25ć

I_R

ȝA

at rated DC blocking voltage

Reverse Recovery Time

Typical Junction Capacitance

Typical Thermal Resistance

Junction Temperature

T_A=100ć

t_rr

C_j

ഒꢈ:

ೃJA

150

-55 to 150

Storage Temperature

T_stg

* 1 Reverse recovery test conditon: I_F= 0.5 A, I_R= 1 A, Irr = 0.25 A

* 2 Measured at 1MHz and applied reverse voltage of 4V D.C

* 3 P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas.

Ƶ Marking

NO.

1KF2120A

2R02

1KF2160A

2R06

1KF2170A

Marking

2R10

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中文翻译

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