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1KE05-4 PDF预览

1KE05-4

更新时间: 2024-11-29 18:09:39
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
6页 385K
描述
ESD Protection Array

1KE05-4 数据手册

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SMD Type  
Diodes  
TVS Diode Array  
1KE05-4  
Features  
Applications  
ESD protection to  
USB Power & Data Line Protection  
IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)  
IEC 61000-4-4 (EFT) 40A (5/50ns)  
IEC 61000-4-5 (Lightning) 24A (8/20µs)  
Array of surge rated diodes with internal TVS Diode  
Protects two I/O lines  
Ethernet 10BaseT  
I2C Bus Protection  
Video Line Protection  
T1/E1 secondary IC Side Protection  
Portable Electronics  
Low capacitance (<10pF) for high-speed interfaces  
Low clamping voltage  
Microcontroller Input Protection  
WAN/LAN Equipment  
Low operating voltage: 5.0V  
ISDN S/T Interface  
Solid-state silicon-avalanche technology  
Marking : SL3  
Pin 4  
4
1
Pin 2  
Pin 3  
2
3
Pin 1  
PIN Configuration  
Circuit Diagram  
Absolute Maximum Ratings  
Parameter  
Symbol  
Value  
500  
Unit  
W
Peak pulse power (tp = 8/20μs)  
Ppk  
IPP  
Peak pulse current (tp = 8/20μs)  
Peak forward voltage (IF = 1A, tp = 8/20μs)  
Lead soldering temperature  
25  
A
V
VFP  
TL  
1.5  
260 (10 sec.)  
-55 to +125  
-55 to +150  
Operating temperature  
Storage temperature  
TJ  
Tstg  
Electrical Characteristics  
Parameter  
Reverse stand-off voltage  
Reverse breakdown voltage  
Reverse leakage current  
Symbol  
VRWM  
VBR  
IR  
Test Conditions  
Min  
6
Typ  
Max  
5
Unit  
V
It= 1mA  
5
μA  
VRWM = 5 V, T = 25℃  
IPP=1A  
Clamping voltage (tp=8/20μs)  
Clamping voltage (tp=8/20μs)  
Clamping voltage (tp=8/20μs)  
VC  
9.8  
12  
20  
VC  
V
IPP=10A  
VC  
IPP=25A  
VR = 0Vdc, f=1MHz  
Between I/O pins and GND  
6
3
10  
CJ  
Junction capacitance  
pF  
VR = 0Vdc, f=1MHz  
Between I/O pins  
1
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