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1H5-T3-LF PDF预览

1H5-T3-LF

更新时间: 2024-10-30 13:03:27
品牌 Logo 应用领域
WTE 二极管功效
页数 文件大小 规格书
3页 48K
描述
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-1, 2 PIN

1H5-T3-LF 数据手册

 浏览型号1H5-T3-LF的Datasheet PDF文件第2页浏览型号1H5-T3-LF的Datasheet PDF文件第3页 
WTE  
POWER SEMICONDUCTORS  
1H1 – 1H8  
1.0A MINIATURE HIGH EFFICIENCY RECTIFIER  
Features  
!
Diffused Junction  
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
A
B
A
High Surge Current Capability  
Mechanical Data  
C
!
!
Case: Molded Plastic  
D
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 0.181grams (approx.)  
Mounting Position: Any  
R-1  
Min  
20.0  
2.00  
0.53  
2.20  
Dim  
A
Max  
!
!
!
!
B
3.50  
0.64  
2.60  
C
Marking: Type Number  
D
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
1H1  
1H2  
1H3  
1H4  
1H5  
1H6  
1H7  
1H8  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
300  
210  
400  
280  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
(Note 1)  
1.0  
30  
@TA = 55°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
1.0  
1.3  
1.7  
V
Peak Reverse Current  
@TA = 25°C  
5.0  
100  
µA  
At Rated DC Blocking Voltage @TA = 100°C  
Reverse Recovery Time (Note 2)  
Typical Junction Capacitance (Note 3)  
Operating Temperature Range  
trr  
Cj  
50  
20  
75  
15  
nS  
pF  
°C  
°C  
Tj  
-65 to +125  
-65 to +150  
Storage Temperature Range  
TSTG  
*Glass passivated forms are available upon request  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case  
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 1.  
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
1H1 – 1H8  
1 of 3  
© 2002 Won-Top Electronics  

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