5秒后页面跳转
1H3-E PDF预览

1H3-E

更新时间: 2024-11-28 13:03:27
品牌 Logo 应用领域
RECTRON 功效
页数 文件大小 规格书
2页 30K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon,

1H3-E 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.08其他特性:HIGH RELIABILITY, LOW POWER LOSS
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.05 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1H3-E 数据手册

 浏览型号1H3-E的Datasheet PDF文件第2页 
1H1  
THRU  
1H8  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
HIGH EFFICIENCY RECTIFIER  
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere  
FEATURES  
* Low power loss, high efficiency  
* Low leakage  
* Low forward voltage  
* High current capability  
* High speed switching  
* High surge capability  
* High reliability  
R-1  
MECHANICAL DATA  
* Case: Molded plastic  
(
)
.025 0.65  
* Epoxy: Device has UL flammability classification 94V-O  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
DIA.  
(
)
.021 0.55  
(
)
.787 20.0  
MIN.  
* Weight: 0.12 gram  
(
)
.126 3.2  
(
)
.106 2.7  
(
)
.102 2.6  
DIA.  
(
)
.091 2.3  
(
)
.787 20.0  
MIN.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
1H1  
50  
1H2  
100  
1H3  
200  
1H4  
300  
1H5 1H5P 1H6  
1H7  
1H8 UNITS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Volts  
Volts  
Volts  
V
V
RRM  
RMS  
400  
400  
600  
800  
560  
800  
1000  
35  
50  
70  
140  
200  
210  
300  
280  
400  
280  
400  
420  
600  
700  
100  
1000  
Maximum DC Blocking Voltage  
V
DC  
Maximum Average Forward Rectified Current  
I
O
1.0  
25  
Amps  
Amps  
at TA  
= 25oC  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
Typical Junction Capacitance (Note 2)  
C
J
15  
12  
pF  
0 C  
Operating and Storage Temperature Range  
T
J
, TSTG  
-65 to + 150  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
CHARACTERISTICS  
Maximum Instantaneous Forward Voltage at 1.0A DC  
Maximum DC Reverse Current  
SYMBOL  
1H1  
1H2  
1.0  
1H3  
1H4  
1H5 1H5P 1H6  
1.0  
1H7  
1.7  
1H8 UNITS  
Volts  
V
F
1.3  
5.0  
uAmps  
uAmps  
at Rated DC Blocking Voltage TA  
= 25oC  
I
R
Maximum Full Load Reverse Current  
100  
Average, Full Cycle .375” (9.5mm) lead length at TL  
= 55oC  
Maximum Reverse Recovery Time (Note 1)  
trr  
75  
nSec  
50  
NOTES : 1. Test Conditions: I  
F
= 0.5A, IR = -1.0A, IRR = -0.25A  
2001-5  
2. Measured at 1 MH  
Z
and applied reverse voltage of 4.0 volts  

与1H3-E相关器件

型号 品牌 获取价格 描述 数据表
1H3G EIC

获取价格

HIGH EFFICIENCY RECTIFIERS
1H3G MCC

获取价格

1.0 Amp Glass Passivated High Efficient Rectifier 50 - 1000 Volts
1H3G BL Galaxy Electrical

获取价格

HIGH EFFICIENCY RECTIFIER
1H3G BL Galaxy Electrical

获取价格

1A,200V,50ns,Ultra Fast Rectifiers
1H3G CZSTARSEA

获取价格

R-1
1H3-G SENSITRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, LEAD FREE, PLASTIC, R-1, 2 PIN
1H3G-AP MCC

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-1, 2 PIN
1H3G-BP MCC

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, PLASTIC, R-1, 2 PIN
1H3GP MCC

获取价格

DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, PLASTIC, R-1, 2 PIN, Signal Diode
1H3G-T MCC

获取价格

Rectifier Diode,