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1H2-TP PDF预览

1H2-TP

更新时间: 2024-10-30 19:51:47
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
2页 373K
描述
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-1, 2 PIN

1H2-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:O-PALF-W2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.24其他特性:LOW LEAKAGE CURRENT
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:125 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1H2-TP 数据手册

 浏览型号1H2-TP的Datasheet PDF文件第2页 
M C C  
1H1  
THRU  
1H7  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
Halogen free available upon request by adding suffix "-HF"  
Low Leakage Current  
·
·
Fast Switching for High Efficiency  
1.0 Amp  
Efficient Rectifier  
50 - 1000 Volts  
High  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Maximum Ratings  
Operating Temperature: -55OC to +125OC  
Storage Temperature: -55OC to +150OC  
Typical Thermal Resistance; 60OC/W Junction To Case  
18OC/W Junction To Ambient  
R-1  
MCC Part  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
1H1  
1H2  
1H3  
1H4  
1H5  
1H6  
1H7  
1H1  
1H2  
1H3  
1H4  
1H5  
1H6  
1H7  
35V  
70V  
D
100V  
200V  
400V  
600V  
800V  
1000V  
100V  
140V  
280V  
420V  
560V  
700V  
200V  
400V  
600V  
800V  
A
1000V  
Cathode Mark  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
1.0A  
TA = 55OC  
B
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine  
D
Maximum  
Instantaneous  
Forward Voltage  
1H1-4  
1H5  
1H6-1H7  
VF  
1.0V  
1.3V  
1.7V  
IFM = 1.0A;  
TJ = 25OC  
C
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
Maximum Reverse  
Recovery Time  
1H1-1H5  
IR  
5.0uA  
150uA  
TJ = 25OC  
TJ = 125OC  
DIMENSIONS  
INCHES  
MM  
DIM  
NOTE  
MIN  
MAX  
0.140  
0.102  
0.024  
-----  
MIN  
2.90  
2.30  
0.50  
20.00  
MAX  
3.50  
2.60  
0.60  
-----  
Trr  
CJ  
A
B
C
D
0.116  
0.091  
0.020  
0.787  
50ns  
75ns  
IF=0.5A, IR=1.0A  
IRR=0.25A  
1H6-1H7  
Typical Junction  
Capacitance  
1H1-1H5  
20pF  
15pF  
Measured at  
1.0MHz, VR=4.0V  
1H6-1H7  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
www.mccsemi.com  
1 of 2  
Revision: B  
2013/01/01  

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