Datasheet > 1EDF5673F

1EDF5673F

更新时间： 2024-09-24 11:15:03

品牌	Logo	应用领域
英飞凌 - INFINEON		驱动
页数	文件大小	规格书
39页	1448K
描述
GaN EiceDRIVER™IC具有出色的稳健性和效能，非常适合驱动GaN HEMT

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1EDF5673F 数据手册

GaN EiceDRIVER™ product family

Single-channel functional and reinforced isolated gate-drive ICs for

high-voltage enhancement-mode GaN HEMTs

Features

•

Dedicated gate driver ICs for high-voltage GaN power switches (CoolGaN™, GIT technology based products)

–

low driving impedance (on-resistance 0.85 Ω source, 0.35 Ω sink)

resistor programmable gate current (typ. 10 mA) in steady “on” state

programmable negative gate voltage to completely avoid spurious turn-on

•

Single output supply voltage (typ. 8 V, floating)

Switching behavior independent of duty-cycle (2 "off" voltage levels)

Differential concept to ensure negative gate drive voltage under any condition

Fast input-to-output propagation (37 ns) with excellent stability (+7/-6 ns)

Galvanic input-to-output isolation based on coreless transformer (CT) technology

Common mode transient immunity (CMTI) > 200 V/ns

3 package versions

–

1EDF5673K: 13-pin LGA (5 x 5 mm, PG-TFLGA-13-1) for functional isolation (1.5 kV)

1EDF5673F: 16-pin P-DSO (150 mil, PG-DSO-16-11) for functional isolation (1.5 kV)

1EDS5663H: 16-pin P-DSO (300 mil, PG-DSO-16-30) for reinforced isolation

•

Fully qualified according to JEDEC for Industrial Applications

Description

CoolGaN™ and similar GaN switches require a continuous gate current of a few mA in their "on" state. Besides,

due to low threshold voltage and extremely fast switching transients, a negative "off" voltage level may be

needed. The widely used RC-coupled gate driver fulfils these requirements, however it suffers from a duty-cycle

dependence of switching dynamics and the lack of negative gate drive in specific situations.

Infineon's GaN EiceDRIVER™ solves these issues with very low effort. The two output stages shown below enable

a zero “off" level to eliminate any duty-cycle dependence. In addition, the differential topology is able to provide

negative gate drive without the need for a negative supply voltage. However, it requires a floating supply voltage

not compatible with bootstrapping.

GaN EiceDRIVER™

Controller

VDD > 3.5V

R_VDDI

VDDS

VDDI

SLDO

PWM

UVLO_in

I_shunt

UVLO_outS

VDD

R_tr

C_C

VDDO

C_VDDO

SLDO

S₁

S₂

R_SS

OUTS

GNDS

Control

Logic

PWM

Control

Logic

C_VDDI

GNDI

CoolGaN™

VDDG

UVLO_outG

IGx60Rxx

DISABLE

GPIOx

GND

S₃

S₄

OUTG

GNDG

Control

Logic

TNEG

R_t1

delay

t₁

GNDI

Final datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

Rev. 2.4

2021-11-09

12 3 4 5 6 7...39

中文翻译

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与1EDF5673F相关器件

型号	品牌	获取价格	描述	数据表
1EDF5673K	INFINEON	获取价格	GaN EiceDRIVER™IC具有出色的稳健性和效能，非常适合驱动GaN HEMT
1EDG	GULFSEMI	获取价格	ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE: 200 TO 600V CURRENT: 1.0A
1EDI05I12AF	INFINEON	获取价格	Separate output variant for IGBT
1EDI05I12AH	INFINEON	获取价格	1200 V单个高边栅极驱动器IC，具有电气隔离、短路箝位和独立的汇/源输出
1EDI10I12MF	INFINEON	获取价格	1200 V, 2.3 A single-channel isolated gate driver with Miller clamp and short circuit clam
1EDI10I12MH	INFINEON	获取价格	1200V 单通道高边栅极驱动器 IC，带电气隔离、有源米勒箝和短路夹紧
1EDI2001AS	INFINEON	获取价格	Single Channel Isolated Driver for Inverter Systems AD Step
1EDI2001AS_15	INFINEON	获取价格	Single Channel Isolated Driver for Inverter Systems AD Step
1EDI2002AS	INFINEON	获取价格	Single Channel Isolated Driver for Inverter Systems AD Step
1EDI2002AS_15	INFINEON	获取价格	Single Channel Isolated Driver for Inverter Systems AD Step

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