EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact)
Datasheet
1ED3140MU12F, 1ED3141MU12F, 1ED3142MU12F
Single-channel 3 kV (rms) isolated gate driver IC with separate outputs
Features
• Single-channel isolated gate driver
• For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
• Up to 6.5 A typical peak output current
• 45 ns propagation delay with 7 ns part-to-part matching (skew)
• 35 V absolute maximum output supply voltage
• High common-mode transient immunity CMTI > 300 kV/µs
• Separate source and sink outputs with active shutdown and short circuit clamping
• Galvanically isolated coreless transformer gate driver
• 3.3 V and 5 V input supply voltage
• Suitable for operation at high ambient temperature and in fast switching applications
• UL 1577 certification VISO = 3.0 kV (rms) for 1 min
Potential applications
• EV charging
• Energy storage systems
• Solar inverters
• Server and telecom switched mode power supplies (SMPS)
• UPS-systems
• AC and brushless DC motor drives
• Commercial air-conditioning (CAC)
• High voltage DC-DC converter and DC-AC inverter
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Description
The 1ED314xMU12F gate driver ICs are galvanically isolated single channel gate driver ICs for IGBT, MOSFET and SiC MOSFET in
DSO-8 150 mil package. They provide a typical output current of up to 6.5 A.
The input logic pins operate on a wide input voltage range from 3 V to 6.5 V using CMOS threshold levels to support 3.3 V
microcontrollers.
Data transfer across the isolation barrier is realized by the coreless transformer technology. All variants have input and output
undervoltage lockout (UVLO) and active shutdown.
VCC1
VCC2,H
OUTH
IN+
IN-
Single channel
EiceDRIVERTM with separate
output
OUTL
GND1
VCC1
VEE2,H
VCC2,L
Control
OUTH
IN+
IN-
Single channel
EiceDRIVERTM with separate
output
OUTL
GND1
VEE2,L
Typical application diagram
Datasheet
www.infineon.com/gdisolated
Please read the sections "Important notice" and "Warnings" at the end of this document
1.11
2023-07-26