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1B02TRR16 PDF预览

1B02TRR16

更新时间: 2024-02-25 11:19:02
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管
页数 文件大小 规格书
4页 57K
描述
Bridge Rectifier Diode, 1 Phase, 1A, 200V V(RRM), Silicon

1B02TRR16 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PDIP-T4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.71
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PDIP-T4
最大非重复峰值正向电流:31 A元件数量:4
相数:1端子数量:4
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:200 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

1B02TRR16 数据手册

 浏览型号1B02TRR16的Datasheet PDF文件第2页浏览型号1B02TRR16的Datasheet PDF文件第3页浏览型号1B02TRR16的Datasheet PDF文件第4页 
Bulletin E2788 rev. D 04/00  
1BSERIES  
1A Single Phase D.I.L. Rectifier Bridge  
• Leads on standard 0.1" grid  
• Suitable for automatic insertion  
• High surge current capability  
• Fully characterised data  
• Widetemperaturerange  
• Surfacemountoption  
+
IO(av) = 1.0 A  
VRRM range  
50 to 1000V  
IO(av)  
~
~
-
Description  
The 1B Series of Single Phase Rectifier Bridges  
consists of four silicon junctions encapsulated in  
a4pinD.I.L.package.Thesedevicesareintended  
for general use in industrial and consumer equip-  
ment.  
Electrical Specification  
1B...  
Units Conditions  
IO  
Maximum DC output  
current  
1.0  
0.8  
30  
A
A
A
A
Tamb = 40oC, Resistive or inductive load  
Tamb = 40oC, Capacitive load  
IFSM  
Maximum peak one  
cycle, non-repetitive  
surge current  
t = 10ms, 20ms  
Following any rated  
load condition and with  
rated VRRM reapplied  
Initial TJ = TJ max  
31  
t = 8.3ms, 16.7ms  
I2t  
Maximum I2t capability  
4.5  
4.1  
6.4  
5.8  
64  
A2s  
A2s  
A2s  
A2s  
A2s  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
for fusing  
100% VRRM reapplied  
Initial TJ = TJ max  
no voltage reapplied  
I2t  
VFM  
IRM  
f
Maximum I2t  
t = 0.1 to 10ms, no voltage reapplied  
capability for fusing  
Maximum peak forward  
voltage per diode  
Typical peak reverse  
leakage per diode  
Operating frequency  
range  
1.0  
V
IFM = 1.0A, TJ = 25oC  
5
µA  
µA  
Hz  
TJ = 25oC, 100% VRRM  
TJ = 150oC, 100% VRRM  
100  
50 to 1000  
VRRM  
Maximum repetitive peak  
reverse voltage range  
50 to 1000  
V
Thermal and Mechanical Specifications  
1B...  
Units Conditions  
TJ  
Operating and storage  
temperature range  
Thermal resistance,  
junctions to ambient  
Approximate weight  
- 55 to 150  
oC  
Tstg  
RthJA  
60  
K/W  
W
0.6 (0.02)  
g (oz)  
1

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