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1ZC82 PDF预览

1ZC82

更新时间: 2024-01-20 09:06:39
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管齐纳二极管测试
页数 文件大小 规格书
4页 115K
描述
TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE

1ZC82 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:LEAD FREE, PLASTIC, 3-3F2A, 2 PIN针数:2
Reach Compliance Code:unknown风险等级:5.59
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
最大功率耗散:1 W认证状态:Not Qualified
标称参考电压:82 V最大反向电流:10 µA
表面贴装:NO技术:ZENER
端子形式:WIRE端子位置:AXIAL
电压温度Coeff-Max:113 mV/ °C最大电压容差:5%
工作测试电流:3 mABase Number Matches:1

1ZC82 数据手册

 浏览型号1ZC82的Datasheet PDF文件第2页浏览型号1ZC82的Datasheet PDF文件第3页浏览型号1ZC82的Datasheet PDF文件第4页 
1ZC12~1ZC120  
TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE  
TENTATIVE  
1ZC12~1ZC120  
CONSTANT VOLTAGE REGULATION  
TELEPHONE, PRINTER USES  
Unit: mm  
lAverage Power Dissipation  
lZener Voltage  
: P = 1.0W  
: V = 12~120 V  
Z
lTolerance of Zener Voltage (V ) : ±10%  
Z
l Plastic Mold Package  
MAXIMUM RATINGS (Ta=25°C)  
CHARACTERISTIC  
Power Dissipation  
SYMBOL  
RATING  
UNIT  
P
1.0  
W
°C  
°C  
Junction Temperature  
T
j
40~150  
40~150  
Storage Temperature Range  
T
stg  
JEDEC  
EIAJ  
TOSHIBA  
33F2A  
Weight: 0.18g (Typ.)  
MARKING  
1
2001-06-13  

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