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1SS372

更新时间: 2024-01-13 12:29:20
品牌 Logo 应用领域
科信 - KEXIN 二极管开关
页数 文件大小 规格书
1页 48K
描述
HIGH SPEED SWITCHING DIODE

1SS372 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.68其他特性:HIGH RELIABILITY
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
湿度敏感等级:1元件数量:2
端子数量:3最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.1 W最大重复峰值反向电压:10 V
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

1SS372 数据手册

  
SMD Type  
Diodes  
Silicon Epitaxial Schottky Barrier Type  
1SS372  
Features  
Small package  
Low forward voltage : VF = 0.23V (typ.) @ IF=5mA  
1 ANODE  
3 CATHODE/ANOD  
2 CATHODE  
Absolute Maximum Ratings Ta = 25  
Parameter  
Maximum (Peak) reverse voltage  
Reverse voltage  
Symbol  
Rating  
Unit  
V
VRM  
VR  
15  
10  
V
Average forward current  
Maximum (Peak) forward current  
Surge current (10ms)  
IO  
100 *  
200 *  
1 *  
mA  
mA  
A
IFM  
IFSM  
P
Power dissipation  
100  
mW  
Junction temperature  
Tj  
125  
Storage temperature  
Tstg  
Topr  
-55 to +125  
-40 to 100  
Operating Temperature Range  
*Unit Rating .Total Rating= Unit RatingX0.7  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
Typ  
Max  
Unit  
V
IF = 1mA  
IF = 5mA  
0.18  
Forward voltage  
VF  
0.23 0.30  
0.35 0.50  
20  
IF = 100mA  
VR = 10V  
Reverse current  
IR  
ìA  
pF  
Total capacitance  
CT  
VR = 0, f = 1MHz  
20  
40  
Marking  
Marking  
N9  
1
www.kexin.com.cn  

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