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1N5930 PDF预览

1N5930

更新时间: 2024-10-26 20:12:43
品牌 Logo 应用领域
鲁光 - LGE 测试二极管
页数 文件大小 规格书
3页 1991K
描述
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1N5930 技术参数

Case Style:DO-41Pd(W):1.5
VZ(Min):-VZ(Nom):16
VZ(Max):-IZT(mA):23.4
IR(uA):1VR(V):12.2
class:Diodes

1N5930 数据手册

 浏览型号1N5930的Datasheet PDF文件第2页浏览型号1N5930的Datasheet PDF文件第3页 
1N5913A-1N5956A  
Zener Diodes  
POWER DISSIPATION: 1.5W  
DO - 41  
Features  
Silicon planar power zener diodes  
No suffix indicates a ±20% tolerance on nominal Vz.  
Suffix "A" denotes a ±10%,Suffix "B" denotes a ±5%,  
Suffix "C" denotes a ±2%,Suffix "D" denotes a ±1%.  
1.00 (25.4)  
0.107 (2.7)  
MIN.  
0.080 (2.0)  
0.205 (5.2)  
0.166 (4.2)  
Mechanical Data  
1.00 (25.4)  
Case:DO-41  
0.034 (0.86)  
MIN.  
0.028 (0.71)  
Terminals: Solderable per MIL-STD-202, Method 208  
Polarity: Cathode Band  
Marking: Type Number  
Weight: 0.339 grams  
Dimensions in inches and ( millimeters )  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
SYMBOL  
VALUE  
UNIT  
W
Zener current (see Table "Characteristics")  
1.51)  
150  
Ptot  
TJ  
Power dissipation at Tamb=25  
Junction temperature  
TSTG  
-55---+150  
Storage temperature range  
SYMBOL  
RθJL  
MIN  
TYP  
MAX  
451)  
1.2  
UNIT  
/W  
Thermal resistance junction to lead  
V
V
Forw ard voltage at IF=200mA  
F
NOTES: (1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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