Datasheet > 1N5819

1N5819

更新时间： 2024-02-20 12:34:44

品牌	Logo	应用领域
士兰微 - SILAN		二极管
页数	文件大小	规格书
2页	158K
描述
Schottky Barrier Rectifiers

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技术参数
数据手册

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1N5819 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.56
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JESD-30 代码：	R-PDSO-G2
元件数量：	1	端子数量：	2
最高工作温度：	125 °C	最低工作温度：	-65 °C
最大输出电流：	1 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	最大功率耗散：	0.45 W
最大重复峰值反向电压：	40 V	表面贴装：	YES
技术：	SCHOTTKY	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

1N5819 数据手册

MOSPEC

1N5817 Thru 1N5819

Schottky Barrier Rectifiers

SCHOTTKY BARRIER

RECTIFIERS

Using the Schottky Barrier principle with a Molybdenum barrier metal.

These state-of-the-art geometry features epitaxial construction with oxide

passivation and metal overlay contact. Ideally suited for low voltage, high

frequency rectification, or as free wheeling and polarity protection diodes.

1.0 AMPERES

20-40 VOLTS

＊Low Forward Voltage.

＊Low Switching noise.

＊High Current Capacity

＊Guarantee Reverse Avalanche.

＊Guard-Ring for Stress Protection.

＊Low Power Loss & High efficiency.

＊150℃ Operating Junction Temperature

＊Low Stored Charge Majority Carrier Conduction.

＊Plastic Material used Carries Underwriters Laboratory

Flammability Classification 94V-O

DO-41

MAXIMUM RATINGS

Characteristic

Symbol 1N5817

1N5818

1N5819

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

RMS Reverse Voltage

VR_(RMS)

I_O

Average Rectifier Forward Current

1.0

Non-Repetitive Peak Surge Current

(Surge applied at rate load conditions

half-wave, single phase,60Hz )

MILLIMETERS

I_FSM

DIM

MIN

2.00

25.40

4.10

0.70

MAX

2.70

---

Operating and Storage Junction

Temperature Range

℃

T_J, T_STG

-65 to +150

5.20

0.90

ELECTRIAL CHARACTERISTICS

CASE---

Transfer molded

plastic

Characteristic

Symbol 1N5817

1N5818

1N5819

Unit

Maximum Instantaneous Forward Voltage

(I_F=1.0 Amp)

(I_F=3.0 Amp)

0.550

0.875

0.600

0.900

0.450

V_F

0.750

POLARITY---

Cathode indicated

polarity band

Maximum Instantaneous Reverse Current

(Rated DC Voltage, T_C= 25℃)

(Rated DC Voltage, T_C= 125℃)

0.5

I_R

Typical Junction Capacitance

(Reverse Voltage of 4 volts & f=1 MHz)

C_P

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与1N5819相关器件

型号	品牌	描述	获取价格	数据表
1N5819.TR	FAIRCHILD	暂无描述	获取价格
1N5819/1	VISHAY	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2	获取价格
1N5819/4E	VISHAY	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2	获取价格
1N5819/4F	VISHAY	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2	获取价格
1N5819/4H	VISHAY	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2	获取价格
1N5819/51	VISHAY	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2	获取价格