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1N5817 PDF预览

1N5817

更新时间: 2024-09-23 06:16:15
品牌 Logo 应用领域
科信 - KEXIN 整流二极管
页数 文件大小 规格书
3页 173K
描述
Schottky Barrier Rectifier Diodes

1N5817 数据手册

 浏览型号1N5817的Datasheet PDF文件第2页浏览型号1N5817的Datasheet PDF文件第3页 
SMD Type  
Diodes  
Schottky Barrier Rectifier Diodes  
1N5817-1N5819  
Unit: mm  
DO-214AC(SMA)  
3.93  
3.73  
4.597  
3.988  
1.575  
1.397  
Features  
2.896  
1.67  
2.489 1.47  
1
2
For Surface Mounted Applications  
Metal Silicon Junction, Majority Carrier Conduction  
Low Power Loss, High Efficiency  
High Forward Surge Current Capability  
2.38  
2.18  
5.283  
4.775  
5.49  
5.29  
Recommended  
Land Pattern  
2.438  
1.981  
1.524  
0.762  
0.203  
0.051  
0.305  
0.152  
Maximum Ratings and Electrical Characteristics @ Ta = 25  
Rating  
1N5818  
30  
Parameter  
Symbol  
Unit  
V
1N5817  
20  
1N5819  
40  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
14  
21  
28  
Maximum DC Blocking Voltage  
20  
30  
40  
1.0  
Maximum Average Forward Rectified Current  
I(AV)  
A
A
Peak Forward Surge Current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
40  
IFSM  
VF  
IR  
Maximum InstantaneousForward Voltage at 1.0A  
Maximum DC Reverse Current TA=25  
At Rated DC Blocking Voltage TA=100  
Typical Junction Capacitance *1  
0.45  
0.55  
0.5  
0.55  
V
mA  
6.0  
110  
CJ  
pF  
/W  
88.0  
Typical Thermal Resistance *2  
R JA  
-65 to +125  
-65 to +150  
Operating Runction Temperature Range  
Storage Temperature Range  
TJ  
TSTG  
*1 Measured at 1Mz and applied reverse voltage of 4.0V D.C.  
*2 P.C.B mounted with 0.2X0.2"(5.0x5.0mm)copper pad areas  
Marking  
Part NO.  
Marking  
1N5817  
SS12  
1N5818  
SS13  
1N5819  
SS14  
1
www.kexin.com.cn  

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1N5817/1 VISHAY

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Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
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Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
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Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/56 VISHAY

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Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/58 VISHAY

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Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
1N5817/5819 ETC

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Schottky barrier diodes