5秒后页面跳转
1N5402 PDF预览

1N5402

更新时间: 2024-02-25 15:10:04
品牌 Logo 应用领域
平盛电子 - PFS 二极管
页数 文件大小 规格书
2页 162K
描述
AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER

1N5402 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:O-PALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.05
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:200 V表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

1N5402 数据手册

 浏览型号1N5402的Datasheet PDF文件第2页 
AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER  
VOLTAGE RANGE  
CURRENT  
50 to 1000 Volts  
3.0 Ampere  
1N5400 THRU 1N5408  
DO-27  
FEATURES  
·
·
·
·
·
Low coat construction  
1.0(25.4)  
MIN.  
Low forward voltage drop  
Low reverse leakage  
High forward surge current capability  
High temperature soldering guaranteed:  
260/10 secods/.375(9.5mm)lead length at 5 lbs(2.3kg) tension  
.375(9.5)  
.335(8.5)  
MECHANICAL DATA  
.220(5.6)  
.197(5.0)  
DIA.  
·
·
·
·
·
·
Case: Transfer molded plastic  
Epoxy: UL94V-O rate flame retardant  
Polarity: Color band denotes cathode end  
Lead: Plated axial lead, solderable per MIL-STD-202E method 208C  
Mounting position: Any  
1.0(25.4)  
MIN.  
.052(1.3)  
.048(1.2)  
DIA.  
Weight: 0.042 ounce, 1.19 grams  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
·
·
·
Ratings at 25OC ambient temperature unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load  
For capacitive load derate current by 20%  
SYMBOLS  
UNIT  
Volts  
Volts  
Volts  
1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Maximum DC Blocking Voltage  
100  
1000  
Maximum Average Forward Rectified Current  
0.375(9.5mm) lead length at TA= 75  
I(AV)  
3.0  
Amps  
Peak Forward Surge Current  
8.3mS single half sine wave superimposed on  
rated load (JEDEC method)  
IFSM  
VF  
IR  
125  
Amps  
Volts  
µA  
Maximum Instantaneous Forward Voltage @ 3.0A  
1.0  
5.0  
500  
TA = 25℃  
TA = 150℃  
Maximum DC Reverse Current at Rated  
DC Blocking Voltage per element  
Maximum Full Load Reverse Current, full cycle average  
0.375(9.5mm)lead length at TL=75℃  
IR(AV)  
CJ  
500  
40  
µA  
pF  
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
RθJA  
30  
/W  
Operating Junction Temperature Range  
Storage Temperature Range  
Notes:  
TJ  
-55 to +150  
-55 to +150  
TSTG  
1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.  
2. Thermal Resistance from junction to ambient at 0.375(9.5mm) lead length, P.C.board mounted with 0.8”×0. 8(20×  
20mm) copper heat si nk.  
Web Site:  
WWW.PS-PFS.COM  

与1N5402相关器件

型号 品牌 描述 获取价格 数据表
1N5402(G) LGE 暂无描述

获取价格

1N5402/100 VISHAY Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

获取价格

1N5402/4E VISHAY Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

获取价格

1N5402/4G-E3 VISHAY DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

获取价格

1N5402/4H VISHAY Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

获取价格

1N5402/4H-E3 VISHAY DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

获取价格