5秒后页面跳转
1N5402 PDF预览

1N5402

更新时间: 2024-01-27 00:06:25
品牌 Logo 应用领域
SSC 二极管
页数 文件大小 规格书
2页 397K
描述
3A Silicon Rectifiers

1N5402 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:O-PALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.05
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:200 V表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

1N5402 数据手册

 浏览型号1N5402的Datasheet PDF文件第2页 
1N5400-1N5408  
3A Silicon Rectifiers  
PRODUCT SUMMARY  
Voltage ratings available from 50 Volts to 1000 Volts  
FEATURES  
DO-201AD  
Low forward voltage drop  
High current capability  
High reliability  
High surge current capability  
MECHANICAL DATA  
Case: Molded plastic  
Epoxy: UL 94V-O rate flame retardant  
Lead: Axial leads, matte tin plating  
Polarity: Color band denotes cathode end  
High temperature soldering guaranteed:  
260°C for 10 seconds with 0.375” (9.5mm)  
lead lengths at 5 lbs. (2.3kg) tension  
Weight: 1.2 grams  
Dimensions in inches and (millimeters)  
Pb-free; RoHS-compliant  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Parameter  
Symbol 1N  
1N  
1N  
1N  
1N  
1N  
1N  
Units  
5400 5401 5402 5404 5406 5407 5408  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
50 100 200 400 600 800 1000  
V
V
V
VRRM  
VRMS  
VDC  
35  
70 140 280 420 560 700  
Maximum DC blocking voltage  
50 100 200 400 600 800 1000  
Maximum average forward rectified  
current 0.375 (9.5mm) lead length  
at TA = 75°C  
3.0  
A
I(AV)  
Peak forward surge current, 8.3 ms single  
half sine-wave superimposed on rated  
load (JEDEC method )  
Maximum instantaneous forward voltage  
at 3.0A  
Maximum DC reverse current at TA=25°C  
at rated DC blocking voltage at TA=100°C  
200  
A
V
IFSM  
1.2  
VF  
IR  
10.0  
500  
uA  
uA  
Maximum full load reverse current, full  
cycle average 0.5”(12.5mm) lead length  
at TL=90°C  
HTIR  
Cj  
500  
uA  
Typical junction capacitance ( Note 1 )  
Typical thermal resistance ( Note 2 )  
30  
20  
pF  
°C/W  
Rθ  
JA  
Operating temperature range  
Storage temperature range  
TJ  
-55 to +125  
-55 to +150  
°C  
°C  
TSTG  
Notes: 1. Measured at 1 MHz and applied reverse voltage of 4.0 V D.C.  
2. Mounted with 0.375" (9.5mm) lead length on copper pads, size 20mm x 20mm, on P.C.B.  
9/21/2006 Rev.4.01  
www.SiliconStandard.com  
1 of 2  

与1N5402相关器件

型号 品牌 描述 获取价格 数据表
1N5402(G) LGE 暂无描述

获取价格

1N5402/100 VISHAY Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

获取价格

1N5402/4E VISHAY Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

获取价格

1N5402/4G-E3 VISHAY DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

获取价格

1N5402/4H VISHAY Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

获取价格

1N5402/4H-E3 VISHAY DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

获取价格