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1N5400 PDF预览

1N5400

更新时间: 2024-01-23 22:50:07
品牌 Logo 应用领域
全宇昕 - CYSTEKEC 二极管
页数 文件大小 规格书
3页 137K
描述
3.0Amp Silicon Rectifiers

1N5400 技术参数

生命周期:Contact Manufacturer包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.59
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JEDEC-95代码:DO-27JESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:125 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
最大重复峰值反向电压:50 V最大反向电流:5 µA
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N5400 数据手册

 浏览型号1N5400的Datasheet PDF文件第2页浏览型号1N5400的Datasheet PDF文件第3页 
Spec. No. : C344LA  
Issued Date : 2004.05.07  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 1/3  
3.0Amp Silicon Rectifiers  
1N540XLA Series  
Features  
Low forward voltage drop.  
High reliability  
High current capability  
High surge current capability  
Mechanical Data  
Case : Molded plastic DO-201AD  
Epoxy : UL94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202 method 208 guaranteed  
Polarity: Color band denotes cathode end.  
Mounting Position : Any.  
Weight: 1.1 gram  
Maximum Ratings and Electrical Characteristics  
(Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,  
resistive or inductive load. For capacitive load, derate current by 20%)  
Type  
Parameter  
Symbol  
Units  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
5400 5401 5402 5404 5406 5407 5408  
Repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VR  
50  
35  
50  
100  
70  
100  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
1000  
V
V
V
Maximum DC blocking voltage  
Maximum instantaneous  
VF  
0.95  
V
forward voltage, IF=3A  
Maximum average forward rectified  
current, 0.375”(9.5mm) lead length  
IF(AV)  
3
A
at TA=75  
Peak forward surge current @8.3ms  
single half sine wave superimposed  
on rated load (JEDEC method)  
Maximum DC reverse current, at  
rated DC blocking voltage  
IFSM  
200  
A
IR  
TJ=25  
5
µA  
µA  
50  
TJ=100  
Typical thermal resistance(Note 1)  
Typical junction capacitance (Note 2)  
Storage temperature  
Rth, JA  
CJ  
Tstg  
TJ  
30  
40  
/W  
pF  
-65 ~ +175  
-65 ~ +175  
Operating temperature  
Note : 1.Thermal resistance from junction to ambient, 0.375”(9.5mm) lead length.  
2. Measured at 1MHz and applied reverse voltage of 4VDC.  
1N540XLA  
CYStek Product Specification  

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