1N4148WS
Switching Diodes Silicon Epitaxial Planar
1N4148WS
1. Applications
•
High-Speed Switching
2. Packaging and Internal Circuit
1: Cathode
2: Anode
USC
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Peak reverse voltage
Symbol
Note
Rating
Unit
VRM
VR
100
100
V
V
Reverse voltage
Peak forward current
IFM
IO
500
mA
mA
A
Average rectified current
Non-repetitive peak forward surge current
Power dissipation
250
IFSM
PD
(Note 1)
(Note 2)
1
230
mW
�
Junction temperature
Storage temperature
Tj
150
Tstg
-55 to 150
�
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width 10 ms
Note 2: Mounted on an FR4 board (20 mm × 20 mm, Cu pad: 4 mm × 4 mm)
Start of commercial production
2022-04
©2022
Toshiba Electronic Devices & Storage Corporation
2022-03-04
Rev.1.0
1