1N4148

更新时间： 2024-10-13 22:37:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管开关
页数	文件大小	规格书
1页	68K
描述
Silicon Switching Diode

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数据手册
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1N4148 数据手册

1N4148

Silicon Switching Diode

DO-35 Glass Package

1N4148-1

Applications

Used in general purpose applications,where a controlled forward

characteristic and fast switching speed are important.

DO-35 Glass Package

Features

Lead Dia.

0.018-0.022"

0.458-0.558 mm

Six sigma quality

Metallurgically bonded

BKC's Sigma Bond™ plating

Dia.

0.06-0.09"

1.0"

25.4 mm

(Min.)

Length

0.120-.200"

3.05-5.08- mm

for problem free solderability

LL-34/35 MELF SMD available

Hermetic Glass Body

1.53-2.28 mm

Available up to JANTXV-1 levels

"S" level screening available to Source Control Drawings-

Maximum Ratings

Symbol

PIV

Value

Unit

Peak Inverse Voltage @ 5µA & 0.1µA @ -55^oC

100 (Min).

200

Volts

AverageRectifiedCurrent

Iavg

I_Fdc

mAmps

Amp

Continuous Forward Current

300

Peak Surge Current (t_peak= 1 sec.)

BKC Power Dissipation T_L=50 ^oC, L = 3/8" from body

Operating Temperature Range

I_peak

1.0

P_tot

500

mWatts

^oC

T_Op

-65 to +200

Storage Temperature Range

T_St

-65 to +200

Maximum

1.00

^oC

Electrical Characteristics @ 25^oC*

Forward Voltage Drop @ I_F= 10 mA

Breakdown Voltage @ I_R= 5 µA

Breakdown Voltage @ I_R= 100µA

Symbol

V_F

Minimum

Unit

***

Volts

PIV

100

Reverse Leakage Current @ V_R= 75 V

I_R

5 (100 @ 150 ^oC)

µA

Capacitance @ V_R= 0 V, f = 1mHz

Reverse Recovery time (note 1)

C_T

t_rr

4.0

nSecs

Note 1: Per Method 4031-A with I_F= 10 mA,Vr = 6 V, R_L= 100 Ohms. * UNLESS OTHERWISE SPECIFIED

6 Lake Street - Lawrence, MA 01841

Tel: 978-681-0392 - Fax: 978-681-9135

中文翻译

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1N4148 替代型号

型号	品牌	替代类型	描述	数据表
1N4148WS-E3-08	VISHAY	功能相似	Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
1N4148TR	VISHAY	功能相似	Small Signal Fast Switching Diodes

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