1N4148

更新时间： 2024-09-22 22:37:31

品牌	Logo	应用领域
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页数	文件大小	规格书
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描述
SILICON EPITAXIAL PLANAR DIODE

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1N4148 数据手册

1N4148

SILICON EPITAXIAL PLANAR DIODE

Features

Silicon Epitaxial Planar Diodes

fast switching diode.

This diode is also available in MiniMELF case with the type

designation LL4148.

DIMENSIONS

inches

DIM

Note

Min.

Max.

0.154

0.075

0.020

Min.

Max.

3.9

1.9

0.52

1.083

27.50

Absolute Maximum Ratings (T_a=25

)

Symbols

V_R

Values

Units

Reverse Voltage

Volts

Peak reverse voltage

V_RM

100

Rectified current (Average)

Half wave rectification with Resist. Load

at T_amb=25 and f 50Hz

I_O

150

Surge forward current at t<1s and T=25

I_FSM

P_tot

T_j

500

Power dissipation at T_amb=25

Junction Temperature

500

200

Storage temperature range

T_S

-65 to +200

Note:

(1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature

12 3 4

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1N4148,133	NXP	获取价格	1N4148; 1N4448 - High-speed diodes AXIAL 2-Pin
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1N4148,143	NXP	获取价格	1N4148; 1N4448 - High-speed diodes AXIAL 2-Pin
1N4148.1N4448	TEMIC	获取价格	Silicon Epitaxial Planar Diodes
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