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1N4148 PDF预览

1N4148

更新时间: 2024-02-23 20:36:31
品牌 Logo 应用领域
商朗 - LUNSURE 小信号开关二极管
页数 文件大小 规格书
3页 191K
描述
SMALL SIGNAL SWITCHING DIODE

1N4148 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.76
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.715 V最大非重复峰值正向电流:2 A
元件数量:1最高工作温度:150 °C
最大输出电流:0.15 A最大重复峰值反向电压:75 V
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:YESBase Number Matches:1

1N4148 数据手册

 浏览型号1N4148的Datasheet PDF文件第2页浏览型号1N4148的Datasheet PDF文件第3页 
CE  
1N4148  
SMALL SIGNAL SWITCHING DIODE  
CHENYI ELECTRONICS  
FEATURES  
. Silicon epitaxial planar diode  
. Fast swithching diodes  
. 500mW power dissipation  
. The diode is also available in the Mini-Melf case with the type  
designation LL4148  
MECHANICAL DATA  
. Case: DO-35 glass case  
. Polarity: Color brand denotes cathode end  
. Weight: Approx. 0.13gram  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(Ratings at 25 ambient temperature unless otherwise specified)  
Symbol  
VR  
Value  
Units  
Volts  
Volts  
mA  
Reverse voltage  
75  
Peak reverse voltage  
VRM  
100  
150  
Average rectified current, Half wave rectification with  
Resistive load at TA=25 and F 50Hz  
Surge forward current at t<1S and TJ=25  
Power dissipation at TA=25  
IAV  
IFSM  
Ptot  
TJ  
500  
5001)  
mA  
mW  
Junction temperature  
175  
Storage temperature range  
T
STG  
-65 to + 175  
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)  
ELECTRICAL CHARACTERISTICS  
(Ratings at 25 ambient temperature unless otherwise specified)  
Symbols  
Min.  
Typ.  
Max.  
1
Units  
Volts  
nA  
Forward voltage  
VF  
IR  
Leakage current at VR=20V  
at VR=75V  
25  
5
IR  
nA  
at VR=20V, TJ=150  
IR  
50  
4
nA  
Junction capacitance at VR=VF=0V  
CJ  
pF  
Voltage rise when switching ON tested with 50mA  
pulse Tp=0.1 S, Rise time<30 S, fp=5 to 100KHz  
Reverse recovery time from IF=10mA to IR=1mA,  
VR=6V, RL=100  
2.5  
Volts  
Vfr  
trr  
4
ns  
Thermal resistance junction to ambient  
Rectification efficience at f=100MHz,VRF=2V  
R
JA  
350  
K/W  
0.45  
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD  
Page 1 of 3  
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)  

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