1N4448/1N4148/1N914B
500 mW Hermetically Sealed Glas Fast Switching Diodes
DO-35
Features
Fast switching device (TRR<4.0nS)
DO-35 package (JEDEC)
Through-hole device type mounting
Hermetically sealed glass
Compression bonded construction
All external surface are corrosion
resistant and leads are readily solderable
RoHS compliant
Solder hot dip Tin(Sn) lead finish
Cathode indicated by polarity band
Dimensions in inches and(millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25oC ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Symbol
Pd
WIV
IFM
Io
IFSURGE
Value
500
75
450
150
2
175
Units
mW
V
Working Inverse Voltage
Non-repetitive Peak Forward Current
Average Rectified Current
mA
mA
A
Peak Forward Surge Current
Operating Junction Temperature
Storage Temperature Range
TJ
TSTG
OC
-65 to + 200
OC
Electrical Characteristics
Type Number
Breakdown Voltage
Symbol
Min
100
75
Max
Units
IR=100uA
BV
V
IR=5uA
Forward Voltage
1N4448, 1N914B
1N4148
1N4448, 1N914B
IF=5.0mA
IF= 10mA
IF =100mA
VR=20V
0.62
0.72
1.0
1.0
-
VF
V
Reverse Leakage Current
nA
uA
pF
nS
25
5
IR
VR=75V
-
-
Junction Capacitance
VR=0, f=1.0MHz
4.0
4.0
Cj
trr
Reverse Recovery Time (Note 1)
Notes: 1. Reverse Recovery Test Conditions: IF=10mA, VR=6V, RL=100Ω, IRR=1mA
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Revision:20170701-P1