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1N4002W PDF预览

1N4002W

更新时间: 2022-02-26 10:46:36
品牌 Logo 应用领域
音特电子 - YINT /
页数 文件大小 规格书
3页 447K
描述
Surface Mount General Purpose Silicon Rectifiers

1N4002W 数据手册

 浏览型号1N4002W的Datasheet PDF文件第2页浏览型号1N4002W的Datasheet PDF文件第3页 
Surface Mount General Purpose Silicon Rectifiers  
1N4001W THRU 1N4007W  
Trustworthy electronic circuit protection expert  
1N4001W THRU 1N4007W  
Features  
For surface mounted applications  
Low profile package  
Glass Passivated Chip Junction  
Ideal for automated placement  
Lead free in comply with EU RoHS 2011/65/EU directives  
Simplified outline SOD-123FL and symbol  
Mechanical Data  
Pinning  
Case: SOD-123FL  
PIN  
DESCRIPTION  
Cathode  
Terminals: Solderable per MIL-STD-750, Method 2026  
Approx. Weight: 15mg 0.00053oz  
1
2
Anode  
Absolute Maximum Ratings And Characteristics  
Ratings at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
Parameter  
Symbols  
VRRM  
1N4001W 1N4002W 1N4003W 1N4004W 1N4005W 1N4006W 1N4007W Units  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
VRMS  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current at Tc = 125 °C  
VDC  
100  
1000  
IF(AV)  
1
A
A
Peak Forward Surge Current 8.3 ms Single  
Half Sine Wave Superimposed on Rated  
Load  
IFSM  
30  
Maximum Forward Voltage at 1 A  
Maximum DC Reverse Current Ta = 25 °C  
at Rated DC Blocking Voltage Ta =125 °C  
Typical Junction Capacitance (1)  
Typical Thermal Resistance (2)  
Operating and Storage Temperature Range  
VF  
IR  
1.1  
V
5
50  
μA  
Cj  
8(TYP.)  
90  
pF  
/W  
RθJA  
Tj, Tstg  
-55 ~ +150  
1Measured at 1 MHz and applied reverse voltage of 4 V D.C  
2P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.  
www.yint.com.cn  
1
Rev:19.3  

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