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1812SMS-68NJLB PDF预览

1812SMS-68NJLB

更新时间： 2024-01-23 16:55:35
品牌 Logo 应用领域
威讯 - RFMD 放大器电感器测试射频感应器脉冲功率放大器
页数 文件大小 规格书
10页 871K
描述
280W GaN Wideband Pulsed Power Amplifier

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1812SMS-68NJLB 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active包装说明：1925
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8504.50.80.00风险等级：5.7
Is Samacsys：N大小写代码：1925
构造：Flat Top型芯材料：AIR
直流电阻：0.0082 Ω标称电感 (L)：0.068 µH
电感器应用：RF INDUCTOR电感器类型：GENERAL PURPOSE INDUCTOR
JESD-609代码：e1功能数量：1
端子数量：2最高工作温度：140 °C
最低工作温度：-40 °C封装高度：4.2 mm
封装长度：4.95 mm封装形式：SMT
封装宽度：6.35 mm包装方法：TR, 7 Inch
最小质量因数（标称电感时）：100自谐振频率：0.0015 MHz
形状/尺寸说明：RECTANGULAR PACKAGE屏蔽：NO
表面贴装：YES端子面层：Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
端子位置：DUAL ENDED端子形状：FLAT
测试频率：150 MHz容差：5%
Base Number Matches：1

1812SMS-68NJLB 数据手册

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RFHA1025  
280W GaN  
Wideband  
Pulsed Power  
Amplifier  
RFHA1025  
280W GaN Wideband Pulsed Power Amplifier  
Package: Flanged Ceramic, 2-Pin  
Features  
Wideband Operation: 0.96GHz to  
1.215GHz  
RF IN  
VG  
Pin 1 (CUT)  
RF OUT  
VD  
Pin 2  
Advanced GaN HEMT Technology  
Advanced Heat-Sink Technology  
Supports Multiple Pulse  
GND  
BASE  
Conditions  
10% to 20% Duty Cycle  
100s to 1ms Pulse Width  
Integrated Matching  
Components for High Terminal  
Impedances  
Functional Block Diagram  
50V Operation Typical  
Performance  
Product Description  
Output Pulsed Power 280W  
The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band  
pulsed radar, air traffic control and surveillance and general purpose broadband  
amplifier applications. Using an advanced high power density gallium nitride (GaN)  
semiconductor process, these high performance amplifiers achieve high output  
power, high efficiency and flat gain over a broad frequency range in a single pack-  
age. The RFHA1025 is a matched power transistor packaged in a hermetic, flanged  
ceramic package. The package provides excellent thermal stability through the use  
of advanced heat sink and power dissipation technologies. Ease of integration is  
accomplished through the incorporation of single, optimized matching networks  
that provide wideband gain and power performance in a single amplifier.  
Pulse Width 100S,  
Duty Cycle 10%  
Small Signal Gain 17dB  
High Efficiency 55%  
-40°C to 85°C Operating  
Temperature  
Applications  
Radar  
Air Traffic Control and  
Surveillance  
General Purpose Broadband  
Amplifiers  
Ordering Information  
RFHA1025S2  
RFHA1025SB  
RFHA1025SQ  
RFHA1025SR  
RFHA1025TR13  
2-Piece sample bag  
5-Piece bag  
25-Piece bag  
50 Pieces on 7” short reel  
250 Pieces on 13” reel  
RFHA1025PCBA-410 Fully assembled evaluation board 0.96GHz to .215GHz;50V  
Optimum Technology Matching® Applied  
GaAs HBT  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
GaAs pHEMT  
Si CMOS  
Si BJT  
GaN HEMT  
BiFET HBT  
SOI  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.  
DS120928  
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