Datasheet > 1702

1702

更新时间： 2023-12-06 20:08:52

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
1页	20K
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小信号晶体管

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1702 数据手册

1702

NPN Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications

The transistor is subdivided into five groups, L, M,

N, O and P, according to its DC current gain.

On special request, these transistors can be

manufactured in different pin configurations.

1. Emitter 2. Base 3. Collector

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Current

600

Power Dissipation

P_tot

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at V_CE= 1 V, I_C= 100 mA

Current Gain Group

h_FE

132

170

213

263

333

189

233

300

370

476

Collector Base Cutoff Current

at V_CB= 20 V

Emitter Base Cutoff Current

at V_EB= 5 V

Collector Base Breakdown Voltage

at I_C= 10 µA

I_CBO

I_EBO

0.1

µA

0.5

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

V_CE(sat)

f_T

Collector Emitter Breakdown Voltage

at I_C= 10 mA

Emitter Base Breakdown Voltage

at I_E= 100 µA

Collector Emitter Saturation Voltage

at I_C= 500 mA, I_B= 50 mA

Gain Bandwidth Product

at V_CE= 5 V, I_C= 10 mA

Output Capacitance

0.7

100

MHz

C_ob

at V_CB= 5 V, f = 1 MHz

Dated : 20/08/2016 Rev: 01

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