16RIA10PBF

更新时间： 2024-11-11 13:03:23

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极触发装置可控硅整流器
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9页	229K
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16RIA10PBF 数据手册

Bulletin I2404 rev. A 07/00

16RIA SERIES

MEDIUM POWER THYRISTORS

Stud Version

Features

16A

Improved glass passivation for high reliability

and exceptional stability at high temperature

High di/dt and dv/dt capabilities

Standard package

Low thermal resistance

Metric threads version available

Types up to 1600V V_DRM/ V_RRM

Typical Applications

Medium power switching

Phase control applications

Can be supplied to meet stringent military,

aerospace and other high-reliability requirements

Major Ratings and Characteristics

16RIA

Parameters

Units

10 to 120

140 to 160

I_T(AV)

°C

@ T_C

I_T(RMS)

I_TSM

@50Hz

@ 60Hz

@50Hz

@ 60Hz

340

225

360

235

I²t

574

255

A²s

524

235

V_DRM/V_RRM

100 to 1200

1400 to 1600

typical

110

- 65 to 125

µs

°C

Case Style

TO-208AA (TO-48)

T_J

www.irf.com

12 3 4 5 6 7...9

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与16RIA10PBF相关器件

型号	品牌	获取价格	描述	数据表
16RIA10S90	VISHAY	获取价格	Medium Power Thyristors (Stud Version), 16 A
16RIA10S90	INFINEON	获取价格	MEDIUM POWER THYRISTORS
16RIA10S90PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 35A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-208AA,
16RIA120	INFINEON	获取价格	MEDIUM POWER THYRISTORS
16RIA120	VISHAY	获取价格	Medium Power Thyristors (Stud Version), 16 A
16RIA120F	INFINEON	获取价格	Silicon Controlled Rectifier, 25.12A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-20
16RIA120L	INFINEON	获取价格	Silicon Controlled Rectifier, 25.12A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-20
16RIA120LPBF	INFINEON	获取价格	Silicon Controlled Rectifier, 25.12A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-20
16RIA120LPBF	VISHAY	获取价格	Silicon Controlled Rectifier, 25.12A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-20
16RIA120M	VISHAY	获取价格	Medium Power Thyristors (Stud Version), 16 A