Datasheet > 16PTxxF

16PTxxF

更新时间： 2022-02-26 11:06:05

品牌	Logo	应用领域
尼尔 - NELLSEMI		/
页数	文件大小	规格书
6页	662K
描述
Stansard SCRs, 16A

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16PTxxF 数据手册

RoHS

16PT Series _RoHS

SEMICONDUCTOR

Stansard SCRs, 16A

Main Features

Symbol

Value

Unit

I_T(RMS)

V_DRM/V_RRM

I_GT

600 to 1000

TO-251 (I-PAK)

(16PTxxF)

TO-252 (D-PAK)

(16PTxxG)

DESCRIPTION

The 16PT series of silicon controlled rectifiers are high

performance glass passivated technology, and are

suitable for general purpose applications.

TO-220AB (Non-lnsulated)

TO-220AB (lnsulated)

Using clip assembly technology, they provide a

superior performance in surge current capabilities.

(16PTxxAI)

(16PTxxA)

2(A)

3(G)

1(K)

TO-263 (D²PAK)

(16PTxxH)

ABSOLUTE MAXIMUM RATINGS

TEST CONDITIONS

VALUE

UNIT

PARAMETER

SYMBOL

TO-251/TO-252

TO-220AB/TO-263

T_c=110°C

T_c=86°C

RMS on-state current full sine wave

(180° conduction angle )

I_T(RMS)

TO-220AB insulated

TO-251/TO-252

TO-220AB/TO-263

T_c=110°C

T_c=86°C

Average on-state current

(180° conduction angle)

I_T(AV)

TO-220AB insulated

F =50 Hz

t = 20 ms

190

200

180

Non repetitive surge peak on-state

I_TSM

current (full cycle, T initial = 25°C)

F =60 Hz

t = 16.7 ms

I²t Value for fusing

A²s

A/µs

I²t

t_p= 10 ms

Critical rate of rise of on-state current

I_G= 2xl_GT, t_r≤100ns

T_j= 125ºC

F = 60 Hz

dI/dt

I_GM

T_p= 20 µs

T_j= 125ºC

Peak gate current

T_p=20µs

Maximum gate power

P_GM

P_G(AV)

T_j=125ºC

Average gate power dissipation

Repetitive peak off-state voltage

V_DRM

V_RRM

T_stg

600 to 1000

Repetitive peak reverse voltage

Storage temperature range

- 40 to + 150

- 40 to + 125

ºC

T_j

Operating junction temperature range

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