RoHS
16PT Series RoHS
SEMICONDUCTOR
Stansard SCRs, 16A
Main Features
2
2
Symbol
Value
16
Unit
IT(RMS)
A
2
1
1
2
3
VDRM/VRRM
IGT
V
3
600 to 1000
25
TO-251 (I-PAK)
(16PTxxF)
TO-252 (D-PAK)
mA
(16PTxxG)
2
DESCRIPTION
The 16PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
suitable for general purpose applications.
1
2
3
1
2
3
TO-220AB (Non-lnsulated)
TO-220AB (lnsulated)
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
(16PTxxAI)
(16PTxxA)
A2
2
A1
A2
(A2)
G
TO-263 (D2PAK)
(16PTxxH)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
TEST CONDITIONS
VALUE
UNIT
PARAMETER
SYMBOL
TO-251/TO-252
TO-220AB/TO-263
Tc=110°C
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
16
A
A
Tc=86°C
Tc=110°C
Tc=86°C
TO-220AB insulated
TO-251/TO-252
TO-220AB/TO-263
Average on-state current
(180° conduction angle)
IT(AV)
10
TO-220AB insulated
F =50 Hz
t = 20 ms
190
200
180
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
F =60 Hz
t = 16.7 ms
I2t Value for fusing
A2s
A/µs
I2t
tp = 10 ms
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Tj = 125ºC
F = 60 Hz
dI/dt
IGM
50
4
Tp = 20 µs
Tj = 125ºC
Tj = 125ºC
Peak gate current
A
Tp =20µs
Maximum gate power
PGM
10
1
W
W
PG(AV)
Tj =125ºC
Tj =125ºC
Average gate power dissipation
Repetitive peak off-state voltage
VDRM
VRRM
Tstg
600 to 1000
V
Repetitive peak reverse voltage
Storage temperature range
- 40 to + 150
- 40 to + 125
ºC
Tj
Operating junction temperature range
Page 1 of 6
www.nellsemi.com