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16CTQ060G-1 PDF预览

16CTQ060G-1

更新时间: 2024-11-05 06:18:35
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
6页 128K
描述
Schottky Rectifier, 2 x 8 A

16CTQ060G-1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-262AA包装说明:R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.34Is Samacsys:N
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:HIGH POWER
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.58 VJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3最大非重复峰值正向电流:650 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:60 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

16CTQ060G-1 数据手册

 浏览型号16CTQ060G-1的Datasheet PDF文件第2页浏览型号16CTQ060G-1的Datasheet PDF文件第3页浏览型号16CTQ060G-1的Datasheet PDF文件第4页浏览型号16CTQ060G-1的Datasheet PDF文件第5页浏览型号16CTQ060G-1的Datasheet PDF文件第6页 
16CTQ...GS/16CTQ...G-1  
Vishay High Power Products  
Schottky Rectifier, 2 x 8 A  
FEATURES  
16CTQ...G-1  
16CTQ...GS  
• 175 °C TJ operation  
• Center tap configuration  
• Low forward voltage drop  
• High frequency operation  
Base  
common  
cathode  
Base  
common  
cathode  
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
2
2
• Guard ring for enhanced ruggedness and long term  
reliability  
• Designed and qualified for industrial level  
2
2
1
1
DESCRIPTION  
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
This center tap Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
D2PAK  
TO-262  
PRODUCT SUMMARY  
IF(AV)  
2 x 8 A  
VR  
60/100 V  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
16  
UNITS  
Rectangular waveform  
A
V
60/100  
650  
tp = 5 µs sine  
A
VF  
8 Apk, TJ = 125 °C (per leg)  
Range  
0.58  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
16CTQ060GS  
16CTQ060G-1  
16CTQ080GS  
16CTQ080G-1  
16CTQ100GS  
16CTQ100G-1  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
60  
80  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average  
forward current  
See fig. 5  
per leg  
8
IF(AV)  
50 % duty cycle at TC = 148 °C, rectangular waveform  
A
per device  
16  
Maximum peak one cycle  
non-repetitive surge current per leg  
See fig. 7  
Following any rated load  
condition and with rated  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
650  
IFSM  
A
210  
V
RRM applied  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 0.50 A, L = 60 mH  
7.50  
mJ  
A
Current decaying linearly to zero in 1 µs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.50  
Document Number: 93243  
Revision: 22-Aug-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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